33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors

Abstract

We report highly stable and high mobility aluminum-doped indium zinc tin oxide (AIZTO) thin-film transistor with field effect mobility larger than 30 cm 2 /Vs in the bottom gate, etch-stopper structure. The electrical instabilities against positive gate bias stress, negative gate bias stress, and negative gate bias under illumination stress are investigated..

P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

“…AIZTO film for control device is also high mobility oxide semiconductor, which exhibits 27 to 33 cm 2 /Vs. In our previous results [2], we successfully developed etch stop (ES) TFT and BCE TFT process and AIZTO ES TFT showed high mobility and good stability performance. With 3 nm-thick IZO layer inserted, the improvement of on-current was not high.…”

“…However, the electrical characteristics of AOS TFTs including ȝFE have still fallen short of fast switching, ultra-high definition and integrated gate/data driver circuits on glass panel. Although many researchers have reported high mobility devices over 30 cm2/Vs using In-rich metal oxides like In-Zn-O (IZO) and In-Sn-Zn-O (ITZO) [2,3], oxygen vacancy defects in these IZO or ITZO films cause unexpected device instability. It is known that incorporation of metal cations such as Ga, Hf, Zr and Al as carrier suppressors can reduce oxygen vacancy defects due to their high oxygen bonding ability but theses metal cations bring out mobility loss.…”