32-GHz cryogenically cooled HEMT low-noise amplifiers

Duh, K.H.G.; Kopp, W.; Ho, P.; Chao, P.C.; Ko, Min-Woo; Smith, P.M.; Ballingall, J. M.; Bautista, J. J.; Ortiz, G.G.

doi:10.1109/16.30966

Cited by 26 publications

(11 citation statements)

References 10 publications

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“…1. Like the earlier studies, [1][2][3][4] we are also able to report what appears to be a "weak" quadratic relationship between noise temperature and physical temperature. The cooling of the LNAs to very low temperatures also shows that below 10 to 20 K, depending on the amplifier, the noise temperature effectively ceases to decrease, an observation that supports the low-temperature prediction of the Pospieszalski model [Eq.…”

Section: Noise Temperature Versus Physical Temperaturesupporting

confidence: 81%

“…All four LNAs were designed for operation at Ka-band and their mean noise temperatures were measured for a 20% bandwidth, centered on the frequency corresponding to minimum noise. As per earlier studies, 1,3 the LNAs were biased for minimum noise at 20 K, and the same drain voltages and drain currents were used for all measurements. Details of the bias settings used by the LNAs, the geometries of the transistors, and the foundry process used are provided in Table 1.…”

Section: Noise and Physical Temperaturementioning

confidence: 99%

“…For MIC LNAs, several studies [1][2][3][4][5] have previously looked at the dependence of noise on the physical temperature at temperatures as low as 12 K. These studies showed either a "weak" quadratic dependence or a linear dependence with respect to the physical temperature. To our knowledge, however, no such study exists for MMIC LNAs.…”

Section: Introductionmentioning

confidence: 99%

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Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

McCulloch

Grahn

Melhuish

et al. 2017

J. Astron. Telesc. Instrum. Syst

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We present the results of noise-temperature measurements for four radio astronomy MMIC low-noise amplifiers (LNAs) at physical temperatures from 2 to 160 K. We observe and confirm recent reports that the noise temperature of an LNA exhibits a quadratic dependence with respect to the physical temperature. We are also able to confirm the prediction by Pospieszalski that below a certain physical temperature there is no further significant reduction in noise temperature. We then discuss these results in the context of both the Pospieszalski noise model and some recent Monte-Carlo simulations, which have implied that at very low temperatures, heating of the electron channel above ambient temperature may help to explain the behavior of the drain temperature parameter.

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Section: Noise Temperature Versus Physical Temperaturesupporting

confidence: 81%

Section: Noise and Physical Temperaturementioning

confidence: 99%

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Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

McCulloch

Grahn

Melhuish

et al. 2017

J. Astron. Telesc. Instrum. Syst

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“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63-67, 69, 70, 72-74, 77, 82-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-117, 119-124, 127-131, 133-138, 140-142, 144, 145, 147-151], BiC-MOS [47, 55, 59, 60, 62, 78-81, 85, 118, 143], and HEMT [53,71,88,89,97,106,152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21,24,27,32,36,37,39,71,89,106,152] and on the other hand, CMOS and BiCMOS are applied for frequencies lower than 10 GHz [35, 38, 41, 47, 49, 50, 55-57, 60, 63-67, 69, 72-74, 77, 80-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-124, 128-138, 140, 142-145, 148-151]. The available exceptions to the author are [3,53,59,88,97,127,141], and [147].…”

Section: In the 2000smentioning

confidence: 99%

“…Considering the articles during 1980s [16–29], usage of GaAs FET was welcomed by engineers in this decade to fabricate monolithic wideband low‐noise RF amplifiers [17–19, 28, 29]. Also, the abbreviation 'LNA' was utilised for the first time [27]. Additionally, High Electron Mobility Transistor (HEMT) [21, 24, 27], Metal‐Oxide‐Semiconductor (MOS) [23] and BiFET [25] technologies were applied for RF amplifiers albeit 'discrete' and ‘BJT‐integrated’ circuits were still presented [20, 22, 26].…”

Section: Uwb Lnamentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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High Electron Mobility Transistor (HEMT)

Pal¹,

Shrivastav²

Solid-State Science and Technology Library

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32-GHz cryogenically cooled HEMT low-noise amplifiers

Cited by 26 publications

References 10 publications

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

Ultrawideband LNA 1960–2019: Review

High Electron Mobility Transistor (HEMT)

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