Efficient ion-slicing of InP thin film for Si-based hetero-integration

Abstract

Integration of high quality single crystalline InP thin film on Si substrate has potential applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of a 634 nm crystalline InP layer from the bulk substrate was achieved by sequential implantation of He ions and H ions at room temperature. It was found that the sequence of He and H ion implantations has a decisive influence on the InP surface blistering and exfoliation, which only occur in the InP pre-implanted with He ions. The exfoliation efficiency first increases and then decreases as a function of H ion implantation fluence. A kinetics analysis of the thermally activated blistering process suggests that the sequential implantation of He and H ions can reduce the InP thin film splitting thermal budget dramatically. Finally, a high quality 2 inch InP-on-Si(100) hetero-integration wafer was fabricated by He and H ion sequential implantation at room temperature in combination with direct wafer bonding.

Recent progress of integrated circuits and optoelectronic chips

“…It has been reported that InP heterojunction bipolar transistors (HBTs) can be integrated on Si materials platforms within silicon fabrication facilities [59], as presented in Figure 8(c). Based on the ion-cutting technology [60][61][62][63], the researchers realized different kinds of wafer scale heterogeneous integration materials, e.g., GaAs/Si, InP/Si, LiTaO 3 /Si, LiNbO 3 /Si, SiC/Si, and Ga 2 O 3 /SiC, as shown in Figure 8(d).…”

Strain Balanced Self‐Supporting Single‐Crystalline LiNbO3 Thin Films for Flexible Electronics

“…Ion slicing process is a feasible and versatile approach for the transfer of single‐crystalline films, which was first proposed by Bruel in 1995, [ 18 ] and has been applied to the mass production of Si‐on‐Insulator (SOI) wafers for years. It has also been successfully extended to the transfer of functional single‐crystalline films onto heterogeneous substrates in waferscale, such as InP‐on‐Si, [ 19 ] SiC‐on‐Si, [ 20 ] Ga 2 O 3 ‐on‐SiC, [ 21 ] and LiTaO 3 ‐on‐Si.…”

Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap

“…, H and He) into the target InP substrate and activating the implanted elements, followed by direct wafer bonding to the Si substrate. However, this method results in degraded crystalline properties caused by implantation-induced lattice disorder . Lee et al demonstrated epitaxially grown InP thin film transfer to plastic foils using epitaxial lift-off (ELO) and cold-welding processes .…”

“…However, this method results in degraded crystalline properties caused by implantation-induced lattice disorder. 12 Lee et al demonstrated epitaxially grown InP thin film transfer to plastic foils using epitaxial lift-off (ELO) and cold-welding processes. 13 While this work presented the feasibility of reusing the costly InP substrate to produce multiple monocrystalline InP thin films toward cost reduction, it is limited by the requirements of expensive equipment such as MOCVD or molecular beam epitaxy for epitaxial growth, tedious wetetching process in hazardous chemicals (e.g., hydrogen fluoride), and additional cleaning processes for the removal of surface contaminants formed during the ELO process.…”