All carbon materials pn diode

Feng, Xiaojing; Zhao, Xing; Li, Mengyao; Qie, Fengxiang; Guo, Jiahui; Zhang, Yuchun; Li, Tiehu; Yuan, Wenxia; Yan, Yong

doi:10.1038/s41467-018-06150-z

Cited by 28 publications

(16 citation statements)

References 37 publications

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“…RR I is determined by the current ratio at voltage cut-off points, and RR II is defined by the capacitance contribution proportion. [16,22] For the N-CAPode, RR I is the ratio of the current at the positive voltage terminal to that at the negative voltage terminal (I PVT /I NVT ). RR II is the ratio of the capacitance in the positive bias voltage range to that in the overall voltage range (C P /C).…”

Section: Working Mechanism and Availability Analysis Of The As-design...mentioning

confidence: 99%

“…[16] The CAPode may present considerable potential in the simultaneous charge storage and rectification of AC circuits, [17,18] iontronics, [19,20] information storage, and logic operations. [21][22][23] Nonetheless, the CAPode concept recently emerged, and the as-built CAPode presents two shortcomings. First, device construction requires the rigorous pore-size engineering of carbon electrodes, which leads to an increase in the manufacturing cost and difficulty of porous carbons, especially of purely microporous carbon.…”

Section: Introductionmentioning

confidence: 99%

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Construction of Supercapacitor‐Based Ionic Diodes with Adjustable Bias Directions by Using Poly(ionic liquid) Electrolytes

Feng

Wang

et al. 2021

Advanced Materials

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The newly emerging supercapacitor‐diode (CAPode), integrating the characteristics of a diode into an electrical‐double‐layer capacitor, can be employed to extend conventional supercapacitors to new technological applications and may play a crucial role in grid stabilization, signal propagation, and logic operations. However, the reported CAPodes have only been able to realize charge storage in the positive‐bias direction. Here, bias‐direction‐adjustable CAPodes realized by using a polycation‐based ionic liquid (IL) or a polyanion‐based IL as electrolyte in an asymmetric carbon‐based supercapacitor architecture are proposed. The resulting CAPodes exhibit charge‐storage function at only the positive‐ or negative‐bias direction with a high rectification ratio (≈80% for rectification ratio II, RRII) and an outstanding cycling life (4500 cycles), representing a crucial breakthrough for designing high‐performance capacitive ionic diodes.

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Section: Working Mechanism and Availability Analysis Of The As-design...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Construction of Supercapacitor‐Based Ionic Diodes with Adjustable Bias Directions by Using Poly(ionic liquid) Electrolytes

Feng

Wang

et al. 2021

Advanced Materials

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“…Graphene is commonly produced by exfoliation from graphite [28,29], epitaxial growth on SiC [30] or chemical vapor deposition (CVD) [31,32]. In particular, CVD produces uniform and large-scale graphene flakes of high-quality and is compatible with the silicon technology; therefore, it has been largely exploited to realize new electronic devices such as diodes [33][34][35][36], transistors [37][38][39], field emitters [40,41], chemical-biological sensors [42,43], optoelectronic systems [44], photodetectors [45][46][47][48][49][50] and solar cells [51].…”

Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

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“…Ancak grafenin gösterdiği Dirac-benzeri davranış ve band aralığının olmaması sebebi ile yarı iletken davranışından ziyade iletken davranışı baskındır. Yarı iletken özelliği kazandırmak için COOH, OH, C-O-C gibi fonksiyonel gruplar ve p/n aktif grupları yapıya katkılanabilir [10,11]. Son zamanlarda, nano-karbon veya grafen materyallerinden farklı olarak, yüzey fonksiyonel gruplarınca zengin gözenekli karbon materyallerin elektronik aygıtlarda kullanımı ve enerji depolama alanlarında uygulamaları da daha kontrol edilebilir ve ekonomik materyaller geliştirilmesi bakımından araştırma konuları arasında yer almıştır [12].…”

Section: Gi̇ri̇ş (Introduction)unclassified

Çay Atıklarından Türetilen Yüksek Performans Karbonun Transistörde İletim Kanal Materyali Olarak Uygulanması

Biçakçi

Akgül

2020

Politeknik Dergisi

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Diyotlar, transistörler ve benzeri aygıtlar gibi ileri teknoloji alanlarında karbon malzemeler çalışılmaktadır. Gözenekli karbon materyallerin elektronik aygıtlarda kullanımı ve enerji depolama alanlarında uygulamaları da daha ekonomik yöntemler geliştirilmesi ve boyutların küçültülmesi bakımından önemlidir. Son yıllarda literatürde çok sayıda karbon kanallı transistör rapor edilmiş olsa da, gözenekli karbon olarak biyokütleden elde edilen karbonun transistör uygulamaları sınırlı sayıdadır. Karbon malzemelerin çoğu, giderek tükenmekte olan fosil kaynaklardır. Bu sebeple yenilenebilir karbon kaynakları önem kazanmaya başlamaktadır. Biyokütle tek yenilenebilir karbon kaynağıdır. Piroliz yöntemi ile biyokömür olarak adlandırılan karbonize materyale dönüştürülebilir. Ancak biyokömürün karbon tabanlı elektriksel aygıtlara uygulanabilmesi için yapısının geliştirilmesi gerekmektedir. Bu çalışmada, endüstriyel çay atıklarından elde edilen biyokömür, kimyasal ve fiziksel yöntemlerle yüksek performans ve n-katkılı karbon materyale dönüştürülmüştür. Yeni türetilen karbon materyal SEM, XRD, ve FT-IR yöntemleriyle karakterize edilmiştir. Oluşturulan bu karbon transistörde iletim kanal malzemesi olarak kullanılmıştır. Geliştirilen alan etkili karbon transistörün akım-gerilim (I-V) karakteristikleri belirlenmiştir. Daha hızlı ve verimli elektriksel aygıtlar, yenilenebilir, sürdürülebilir ve yerel biyokütle kaynakları kullanılarak geliştirilebilir. Anahtar Kelimeler: Endüstriyel çay atığı, yüksek performans karbon, alan etkili transistör.

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All carbon materials pn diode

Cited by 28 publications

References 37 publications

Construction of Supercapacitor‐Based Ionic Diodes with Adjustable Bias Directions by Using Poly(ionic liquid) Electrolytes

Construction of Supercapacitor‐Based Ionic Diodes with Adjustable Bias Directions by Using Poly(ionic liquid) Electrolytes

Contact resistance and mobility in back-gate graphene transistors

Çay Atıklarından Türetilen Yüksek Performans Karbonun Transistörde İletim Kanal Materyali Olarak Uygulanması

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