300 keV Ar ion induced effects in GaAs and 4H-SiC

Chakravorty, Anusmita; Jatav, Hemant; Singh, Budhi; Ojha, Sunil; Kabiraj, D.

doi:10.1016/j.matpr.2021.04.422

Cited by 3 publications

(6 citation statements)

References 21 publications

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“…In the present experiment, the annealing is performed at a higher temperature (1273 K) and the recovery is significant but not complete, as viewed by RBS/C and Raman. Based on TRIM simulations and RBS/C results, the damage in 4H-SiC after 300 keV Ar ion irradiation is within ∼300 nm thickness, with peak damage at a depth of about 175 nm [10,13]. Following ion irradiation, the crystals were also examined using HR-XRD in θ-2θ mode to determine the variation of strain with depth.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, the role of swift heavy ion irradiation in the generation of controlled defects has also been studied [11]. Further, we have also investigated thermal and ion beam-induced ultrafast thermal spike-assisted annealing of pre-damaged 4H-SiC with initial damage as 0.3 dpa (dpa; displacement per atom, 1 dpa = all atoms are displaced at least once from their respective lattice sites) [12,13]. This damage level marks the saturation of the first step of damage build-up where the lattice has isolated point defects and a smaller number of in-cascade clusters (ref.…”

Section: Introductionmentioning

confidence: 99%

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Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

et al. 2022

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“…To check for the 100 MeV Ag ioninduced modifications in the pristine and pre-damaged crystals, low temperature (∼80 K) irradiation was performed at the 15-UD Pelletron accelerator facility in IUAC. To investigate the structural and chemical modifications after irradiation, RBS/C and Raman spectroscopy measurements were performed using the setups described elsewhere [23][24][25]. RBS/C spectra were recorded using 2 MeV He + ions at the Pelletron Accelerator RBS-AMS Systems (PARAS) facility at IUAC.…”

Section: Methodsmentioning

confidence: 99%

“…Within fluences of 6.9 × 10 13 ions cm −2 (0.3 dpa) and 1.8 × 10 14 ions cm −2 (0.8 dpa), the material transforms from crystalline to amorphous phase. The ion-induced total disorder during low-energy ion irradiation is made up of contributions from point defects, in-cascade clusters, extended defect clusters, and amorphization [20,23,24]. In figure 2(b), the disorder with depth profiles show that the damaged layer extends to a depth of about 350 nm from the crystal surface and attains a maximum value at a depth of ∼175 nm (D P ).…”

Section: Kev Ar Induced Damage Build-upmentioning

confidence: 99%

“…Here, it should be noted that f d is derived from RBS experiments whereas dpa comes from TRIM simulations (theoretical). To further investigate the disorder buildup, the maximum damage is plotted as a function of irradiation fluence and fitted using the multi-step damage accumulation model (with steps = 2) [23,27]. This shows that GaAs amorphizes in two steps with each step characterized by a distinct cross-section.…”

Section: Kev Ar Induced Damage Build-upmentioning

confidence: 99%

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GaAs a model system to study the role of electron–phonon coupling on ionization stimulated damage recovery

Chakravorty¹,

Dufour²,

Mishra³

et al. 2022

J. Phys. D: Appl. Phys.

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The latent ion tracks observed in various materials after swift heavy ion (SHI) irradiation is often explained in the framework of thermal spike model. Dominantly, SHIs deposit most of their energy via intense ionization leading to a very high density of localized electronic excitations. The energy transfer from electrons to lattice, within a time of electronic cooling ∼100 fs, is governed by the “electron-phonon coupling” parameter g. In this work, GaAs is used as a model system for studying ionization-stimulated damage recovery. Controlled damage is introduced using 300 keV Ar ion irradiation, followed by successive irradiation using 100 MeV Ag ions at ∼80 K by varying the fluence (ions/cm2). The thermal spike model is utilized to explain the observed recovery. Using the previously published value of g = 3.2 × 1012 W cm−3 K−1 for GaAs, the existing thermal spike code resulted in melting and quick quenching within ∼10 ps, suggesting the formation of SHI-induced tracks. However, experimental observations do not support the formation of tracks in pristine GaAs. Multiple simulation runs, for different g values, predict that for no melting in GaAs, g should be ≤ 1.4 × 1012 W cm−3 K−1. Finally, the 3D version of the thermal spike model is used to simulate the temperature profiles after an impact of SHI irradiation on an amorphous nano-zone embedded in a crystalline GaAs matrix. Simulations predict that the thermal spike in this zone is confined, indicating melt-flow at the crystalline-amorphous interface that can promote recovery. This lattice recovery is further supported by both RBS/C and TEM results.

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Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Chakravorty,

Boulle,

Debelle

et al. 2024

Journal of Applied Physics

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Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct displacement-related defect formation, anticipated from the elastic energy loss of Ar ions, can well explain the irradiation-induced strain depth profiles. The maximum strain in GaAs is evaluated to be 0.88% after Ar irradiation. The unique energy loss depth profile of 100 MeV Ag (swift heavy ions; SHIs) and resistance of pristine 4H-SiC and GaAs to form amorphous/highly disordered ion tracks by ionization energy loss of monatomic ions allow us to examine strain buildup due to the concentrated displacement damage by the elastic energy loss near the end of ion range (∼12 μm). Interestingly, for the case of SHIs, the strain-depth evolution requires consideration of recovery by ionization energy loss component in addition to the elastic displacement damage. For GaAs, strain builds up throughout the ion range, and the maximum strain increases and then saturates at 0.37% above an ion fluence of 3×1013 Ag/cm2. For 4H-SiC, the maximum strain reaches 4.6% and then starts to recover for fluences above 1×1013 Ag/cm2. Finally, the contribution of irradiation defects and the purely mechanical contribution to the total strain have been considered to understand the response of different compounds to ion irradiation.

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300 keV Ar ion induced effects in GaAs and 4H-SiC

Cited by 3 publications

References 21 publications

Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

GaAs a model system to study the role of electron–phonon coupling on ionization stimulated damage recovery

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

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