Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC
Anusmita Chakravorty,
Alexandre Boulle,
Aurélien Debelle
et al.
Abstract:Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct displacement-related defect formation, anticipated from the elastic energy loss of Ar ions, can well explain the irradiation-induced strain depth profiles. The maximum strain in GaAs is evaluated to be 0.88% after Ar … Show more
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