30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser

Matsui, Yasuhiro; Murai, Hitoshi; Arahira, S.; Kutsuzawa, S.; Ogawa, Y.

doi:10.1109/68.554159

Cited by 93 publications

(27 citation statements)

References 7 publications

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“…When we assumed that the parameters above and the passive Q-factor was 18 400 and 3000, the differential gain was 2.3 × 10 −15 and 1.5 × 10 −15 cm 2 , respectively. These values are the same range of previous developed Al-based MQW DFB laser [27].…”

Section: B Dynamic Characteristicssupporting

confidence: 63%

Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Matsuo

Sato

Takeda

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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The introduction of the photonic crystal (PhC) wavelength-scale cavity as a laser cavity enables us to obtain both ultralow threshold current and operating energy. These parameters are essential when using the transmitters in chip-to-chip and on-chip interconnections. To improve the device performance, we employ an ultracompact embedded active region that we call a lambda-scale embedded active-region PhC laser or LEAP laser. We have developed an electrically driven LEAP laser, which operates under room-temperature continuous-wave conditions. To fabricate the electrically driven LEAP laser, we used Zn thermal diffusion and Si ion implantation, respectively, for p-type and n-type doping in an undoped InP layer. However, with previous fabricated devices there was a large leakage current through the substrate and the threshold current was 0.39 mA, which is larger than the expected threshold obtained by optical pumping. To reduce the leakage current, we propose using an InAlAs sacrificial laser instead of an InGaAs layer. The leakage current path through the substrate is effectively suppressed, and as a result, the threshold current is reduced to 7.8 μA, which is the lowest threshold current reported for any laser. Furthermore, the LEAP laser operates at up to 95 • C by using an InGaAlAs-based multiple quantum well structure. We also describe the dynamic characteristics of the laser. The LEAP laser exhibits a maximum 3-dB bandwidth of 16.2 GHz and the modulation current efficiency factor is 53.8 GHz/mA 0 .5 or 1.7 GHz/μA 0 .5 , which is four times that of a vertical cavity surface-emitting laser. The device is directly modulated by a 12.5-Gb/s nonreturn-to-zero signal with a bias voltage of 1.6 V and a bias current of 109 μA, resulting in an energy cost of 14.0 fJ/b. This is the smallest operating energy for any laser. These results indicate that the LEAP laser is highly suitable for use as a transmitter in computercom applications.

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Section: B Dynamic Characteristicssupporting

confidence: 63%

Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Matsuo

Sato

Takeda

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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“…In the first case, broad-band techniques, direct modulation schemes for semiconductor diode lasers have been reported up to 40 GHz at 1.1 m [8] and up to 30 GHz at 1.55 m [9] using multiquantum-well lasers. This method has the disadvantage that it requires specially designed lasers and they have to be operated at their higher power levels.…”

Section: Introductionmentioning

confidence: 99%

64-Mb/s data transmission beyond the relaxation oscillation frequency using monolithically integrated two laterally coupled diode lasers

Acedo

Lamela

Villaseca

et al. 2006

IEEE Photon. Technol. Lett.

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Abstract-In this letter, we demonstrate the possibility of using two monolithically integrated laterally coupled diode lasers for data transmission beyond the intrinsic relaxation oscillation frequency of semiconductor lasers. The resonance of the lateral modes of such structure provides a peak in the small signal modulation response of the device above the relaxation oscillation frequency of the intrinsic emitters that is studied in terms of relative intensity noise and phase noise to characterize this new, simple, and compact device. Optical transmission of a 64-Mb/s pseudorandom bit sequence signal using a microwave carrier over this resonance peak of the lateral modes above the relaxation oscillation is demonstrated for the first time to our knowledge.

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“…In this context, there has been great interest in extending both the tuning bandwidth and the tuning speed [6,7]. Injectioncurrent tuning of semiconductor lasers [8], through the refractive index dependence of the semiconductor on carrier concentration, can provide large bandwidth (GHz and beyond [9]) but has limited tuning range. Temperature tuning is also widely used for frequency stabilizing and trimming of lasers [10], but is limited in both range and speed.…”

Section: Introductionmentioning

confidence: 99%

Optomechanical zipper cavity lasers: theoretical analysis of tuning range and stability

Alegre¹,

Perahia²,

Painter³

2010

Opt. Express

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Abstract:The design of highly wavelength tunable semiconductor laser structures is presented. The system is based on a one dimensional photonic crystal cavity consisting of two patterned, doubly-clamped nanobeams, otherwise known as a "zipper" cavity. Zipper cavities are highly dispersive with respect to the gap between nanobeams in which extremely strong radiation pressure forces exist. Schemes for controlling the zipper cavity wavelength both optically and electrically are presented. Tuning ranges as high as 75 nm are achieved for a nominal design wavelength of λ = 1.3 µm. Sensitivity of the mechanically compliant laser structure to thermal noise is considered, and it is found that dynamic back-action of radiation pressure in the form of an optical or electrical spring can be used to stabilize the laser frequency. Fabrication of zipper cavity laser structures in GaAs material with embedded self-assembled InAs quantum dots is presented, along with measurements of photoluminescence spectroscopy of the zipper cavity modes.

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30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser

Cited by 93 publications

References 7 publications

Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

64-Mb/s data transmission beyond the relaxation oscillation frequency using monolithically integrated two laterally coupled diode lasers

Optomechanical zipper cavity lasers: theoretical analysis of tuning range and stability

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