3. Magnetokristalline und induzierte Anisotropie

Málek, Z.; Schüppel, W.

doi:10.1002/pssb.19620020205

Cited by 14 publications

(1 citation statement)

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“…The magnetic investigation by FMR, MOKE, and SQUID magnetometry on as-prepared 4 -40 nm films at RT showed that the films have ͑a͒ a dominating cubic anisotropy ͑K 4 Ϸ 3 ϫ 10 3 J / m 3 ͒ which is about 1 order of magnitude smaller than the one of bulk Fe ͑K 4 = 4.8ϫ 10 4 J / m 3 ͒, ͑b͒ a small uniaxial in-plane anisotropy, 39 and ͑c͒ a twofold out-of-plane anisotropy favoring an out-of-plane easy axis-both of interfacial nature. Extrapolating these results to thinner layers a perpendicular easy axis can be expected, if the structural homogeneity is maintained.…”

Section: Discussionmentioning

confidence: 98%

Magnetic properties of epitaxialFe3Si∕MgO(001)thin films

et al. 2007

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The composition dependence of the magnetic as well as structural properties of epitaxial 4 -40 nm Fe 3 Si thin films on MgO͑001͒ have been investigated using ferromagnetic resonance, superconducting quantum interference device magnetometry, and magneto-optical Kerr effect. Magnetic anisotropy energy, g factor, and magnetization were determined for different samples with Si concentrations of 20%, 25%, or 30% at room temperature. Additionally, different annealing procedures were applied. The magnetization was determined to be on the order of 0 M Ϸ 1 T. It was found that the films have a dominating cubic anisotropy K 4 Ϸ 3 ϫ 10 3 J / m 3 which depends on the thermal treatment of the film and is about 1 order of magnitude smaller than the one of bulk Fe. A small uniaxial in-plane anisotropy of interfacial nature was detected. The perpendicular uniaxial anisotropy term, which is dominated by an interface contribution, favors a perpendicular easy axis. From frequency-dependent ferromagnetic resonance measurements an isotropic g factor was extracted g = 2.075͑5͒ for 8 and 40 nm samples and g = 2.080͑5͒ for the 4 nm one. Different thermal treatments of the sample showed no influence on the g factor. The magnetic anisotropy fields and g factor decrease linearly as the Si concentration increases within the D0 3 regime.

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Section: Discussionmentioning

confidence: 98%