3-D Simulation of Bosch Process with Voxel-Based Method

Sun, Guangyi; Zhao, Xin; Zhang, Haixia; Wang, Lei; Lu, Guizhang

doi:10.1109/nems.2007.352084

Cited by 10 publications

(9 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In most theoretical models the ions and neutrals reach the silicon surface and react there with etch/deposition rates that are proportional to their flux [2][3][4][5][6][7][8][9][10][11], i.e. the number of ions/neutrals that arrive per unit time.…”

Section: Previous Workmentioning

confidence: 99%

“…Although the flux of neutrals has been taken to be constant in some studies [2,4,5], there is ample agreement in the research community that thermal diffusive reemission (independent of the angle of incidence) is essential in order to explain the reduced number of neutrals that reach the bottom of elongated features and, thus, the lag effect. Thus, the flux of neutrals at point x is given by a similar visibility integral over the source and an additional visibility integral over the rest of the surface, to take into account the reemission of the neutrals until they eventually react:…”

Section: Previous Workmentioning

confidence: 99%

See 1 more Smart Citation

Simulation of microloading and ARDE in DRIE

Gosálvez

Zhou²,

Zhang³

et al. 2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

View full text Add to dashboard Cite

An atomisitic etching model is combined with a continuum concentration solver in order to realistically simulate various effects during Deep Reactive Ion Etching (DRIE or the Bosch process). This includes microloading (or loading effect) and Aspect Ratio Dependent Etching (ARDE or lag effect). The model strongly differs from the current simulation approaches in which the local etch rate depends markedly on complex visibility integrals over the ion and neutral fluxes. Instead, we focus on the description of the etchant depletion.

show abstract

Section: Previous Workmentioning

confidence: 99%

Section: Previous Workmentioning

confidence: 99%

Simulation of microloading and ARDE in DRIE

Gosálvez

Zhou²,

Zhang³

et al. 2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

View full text Add to dashboard Cite

show abstract

“…However, all simulations in ZProcess were performed in a rather ideal manner, which uses 3D mathematical morphology operations of conditional dilation and erosion to construct voxel-based representation of MEMS device without any physical model. Actually, the voxel-based method can be used for physical-based simulation as well [6].So we develop other three process simulation modules, lithography, deposition, and etching, and embed them into ZProcess. Fig.…”

Section: Integrated Simulation Toolmentioning

confidence: 99%

“…Ω Ω (6) DR is the total deposition rate. For the wet etching simulation, continuous cellular automata (CA) method [7] is used.…”

Section: B Deposition Modelmentioning

confidence: 99%

Integrated 3-D Simulation Tool for Micro and Nano Fabrication

Sun

Zhao

et al. 2008

2008 8th IEEE Conference on Nanotechnology

Self Cite

View full text Add to dashboard Cite

This paper introduces an integrated 3-D simulation and visualization environment for Micro/Nano fabrication processes. From the nanostructures in several hundred nanometers to micro devices, most available fabrication processes, e.g., lithography, dry/wet etching, CVD/EVD, have been modeled and can be simulated seamlessly with each other under the uniform voxel-based representation method and standardized layout file. Also, physical-based and sophisticatedbased simulations have been implemented together as well. High quality simulation and visualization algorithm enhance the reliability.

show abstract

“…Sun Guangyi et al [2] has proposed a new approach for 3-D simulation of Bosch process with arbitrary 2-D mask shape. Its surface evolution is based on the morphological operations and the visualization is based on volume rendering.…”

Section: Introductionmentioning

confidence: 99%

An Improved Parallel Implementation of 3-D DRIE Simulation on Multi-core Processors

Zhang

Wang

Liu

et al. 2008

2008 10th IEEE International Conference on High Performance Computing and Communications

Self Cite

View full text Add to dashboard Cite

Deep reactive ion etching (DRIE) technique is a new and powerful tool in Micro-Electro-Mechanical Systems (MEMS) fabrication. A 3-D DRIE simulation can help researcher understand the time-evolution of Bosch process used in DRIE. Due to the high complexity of the algorithm used in the simulation, it is necessary to develop an algorithm that can speedup the simulation. This paper presents a parallel implementation of the 3-D DRIE simulation based onmulti-core processor. The algorithm is based on data partition. We examine four different data partition strategies and find two-dimensional block-cyclic distribution can obtain perfect load balance. The experimental results show that the parallel algorithm obtains a substantial speedup over the serial algorithm on an Intel quad-core computer.

show abstract

3-D Simulation of Bosch Process with Voxel-Based Method

Cited by 10 publications

References 8 publications

Simulation of microloading and ARDE in DRIE

Simulation of microloading and ARDE in DRIE

Integrated 3-D Simulation Tool for Micro and Nano Fabrication

An Improved Parallel Implementation of 3-D DRIE Simulation on Multi-core Processors

Contact Info

Product

Resources

About