Integrated 3-D Simulation Tool for Micro and Nano Fabrication

Abstract

This paper introduces an integrated 3-D simulation and visualization environment for Micro/Nano fabrication processes. From the nanostructures in several hundred nanometers to micro devices, most available fabrication processes, e.g., lithography, dry/wet etching, CVD/EVD, have been modeled and can be simulated seamlessly with each other under the uniform voxel-based representation method and standardized layout file. Also, physical-based and sophisticatedbased simulations have been implemented together as well. High quality simulation and visualization algorithm enhance the reliability.

Preparation of magnetic mixed-templates molecularly imprinted polymer for the separation of tetracycline antibiotics from egg and honey samples

“…In these cases, the higher accuracy and lower detection limit in the subsequent quantification were obtained. 7,8 Recently, a technique based on the magnetic polymer has received increasing attention. Usually, magnetic polymer which has adsorbed the analytes can be easily collected by an external magnetic field without additional filtration or centrifugation, which makes separation faster and easier.…”

Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications

“…They demonstrated surface roughening and rippling during Si etching by Cl 2 plasmas, considering surface reactions in detail and proposing a mechanism that accounts for variations in ion incident angle and gas flux ratio. 3D contact etching models for the Bosch process, involving cycles of etching and deposition, were proposed by Ertl et al 77) and Sun et al 78) Kushner et al 15,[63][64][65][66][67][68][69][70][71] developed multi-scale 2D and 3D Monte Carlo feature-scale models (MCFPM) for Si, SiO 2 , low-k (SiOCH), and metal (TiN/HfO 2 ) films using the gas and vacuum UV (VUV) radiation fluxes taking into account the charge transfer obtained from the HPEM code, showing variations in etched profiles as functions of etching parameters in detail. Regarding 3D SiO 2 HARC etching with a C 4 F 8 /O 2 /Ar gas mixture in a CCP reactor, they discussed the mechanism of feature distortion for symmetric and asymmetric holes, emphasizing the importance of etching conditions and local pattern layouts.…”

“…21. 146) Unlike the conventional voxel model, 77,78) where all voxels within and around an etched region are removed and the voxels retain no information about the etching properties, smart voxels store the history of the etching properties, including ER, n, T C-F , D a , and R V (the reactivity of a voxel that represents the partly etched voxel volume), to enable calculation at each time step of dt 2 . If the R V value reaches the full voxel volume (e.g., in this case, 10), only voxels with R V values higher than 10 are removed.…”