2021
DOI: 10.1109/ted.2021.3058226
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3-D CMOS Chip Stacking for Security ICs Featuring Backside Buried Metal Power Delivery Networks With Distributed Capacitance

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Cited by 16 publications
(9 citation statements)
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“…5. In addition, the collection of EM waves on PCB was suggested the mitigation of power SC leakage [31].…”
Section: Attack Protections -Secure Packagingmentioning
confidence: 99%
“…5. In addition, the collection of EM waves on PCB was suggested the mitigation of power SC leakage [31].…”
Section: Attack Protections -Secure Packagingmentioning
confidence: 99%
“…This structure obviates SC leakages vertically by the BBM shielding effects while horizontally by the BBM distributed decoupling capacitors over the PDNs. The latter flattens the change of power currents locally among logic switching gates and therefore suppresses the power current dependence on arithmetic computation sequences in such as EC-based public-key crypto algorithms [87].…”
Section: Secure Packagingmentioning
confidence: 99%
“…Figure 10 depicts a 3D secure packaging structure. 34,35) All IO pads of each chip are vertically connected to the BBM of the upper tier formed on the backside of the chip via through-silicon vias and microbumps. The BBM also forms a power and ground wiring network; thus, a MOS capacitance is formed between the BBM and the Si substrate via SiO 2 .…”
Section: Detection Of Si-backside Attacksmentioning
confidence: 99%