3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP

Moore, JP; Jones, K. S.; Kennel, H. W.; Corcoran, Sean

doi:10.1016/j.ultramic.2007.08.008

Cited by 18 publications

(8 citation statements)

References 6 publications

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“…Laser-assisted APT was performed using an Imago local electrode atom probe ͑LEAP͒ 3000X-Si system; the addition of a pulsed laser allows the extension of APT from conductive to semi-insulating materials. 12,[17][18][19][20][21][22] During field evaporation, the specimen temperature was maintained at 65 K a͒ Author to whom correspondence should be addressed. Electronic mail: montaray@ufl.edu.…”

mentioning

confidence: 99%

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

Holzworth

Rudawski

Pearton

et al. 2011

Applied Physics Letters

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A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors.

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confidence: 99%

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

Holzworth

Rudawski

Pearton

et al. 2011

Applied Physics Letters

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“…The benefits of APT analysis are realized to the greatest extent on features having three-dimensional structures on a size scale of tens of nanometers or less. As such, there are many applications where APT analysis of surface structures can be very informative (Moore et al, 2008; Talbot et al, 2009; Li et al, 2015) and FIB lift-out techniques are the predominant means of extracting these site-specific regions for APT analysis. As mentioned above, in order to protect the surface during the FIB lift-out process a protective layer is required.…”

Section: Introductionmentioning

confidence: 99%

Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers

Diercks

Gorman

Mulders³

2016

Microsc Microanal

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Six precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.

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“…The technique has successfully been used to study e.g. multilayer structures [1,2,3,4], clustering in alloys [5,6,7,8] and dopant mapping in semiconductor components [9,10,11].…”

Section: Introductionmentioning

confidence: 99%

Atomistic simulations of field assisted evaporation in atom probe tomography

Parviainen¹,

Djurabekova²,

Fitzgerald³

et al. 2015

J. Phys. D: Appl. Phys.

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Atom probe tomography (APT) is a extremely powerful technique for determining the three-dimensional structure and chemical composition of a given sample. Although it is designed to provide images of material structure with atomic scale resolution, reconstruction artifacts, well-known to be present in reconstructed images, reduce their accuracy. No existing simulation technique has been able to fully describe the origin of these artifacts. Here we develop a simulation technique which allows for atomistic simulations of the atom emission process in the presence of high electric fields in APT experiments. Our code combines hybrid concurrent electrodynamics-molecular dynamics and a Monte Carlo approach. We use this technique to demonstrate the atom-level origin of artifacts in APT image reconstructions on examples of inclusions and voids in investigated samples. The results show that even small variations in the surface topology give rise to distortions in the local electric field, limiting the accuracy of conventional APT reconstruction algorithms.

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3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP

Cited by 18 publications

References 6 publications

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers

Atomistic simulations of field assisted evaporation in atom probe tomography

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