3.8x3.8 mm/sup 2/ PCS-CDMA duplexer incorporating thin film resonator technology

Heinze, H.; Schmidhammer, E.; Diekmann, Christian; Metzger, Thomas

doi:10.1109/ultsym.2004.1417753

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…Whereas, AlN films possess better chemical/thermal stabilities, higher phase velocity and dielectric strength than those of ZnO films (Iriarte et al 2010;Cheng and Sun 2003;Jin et al 2012). Owning to the rapid development of resonators and multiplexers for mobile phone applications, AlN films have already been used into industrial production and AlN-based device processing is becoming increasingly mature (Heinze et al 2004). From this point of view, AlN film is a good candidate material to be used in both sensing and microfluidics, i.e., to form an integrated lab-on-a-chip (LOC) device (Wingqvist 2010).…”

Section: Introductionmentioning

confidence: 99%

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Zhou

Pang

Garcia‐Gancedo

et al. 2014

Microfluid Nanofluid

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To date, most surface acoustic wave (SAW) devices have been made from bulk piezoelectric materials, such as quartz, lithium niobate or lithium tantalite. These bulk materials are brittle, less easily integrated with electronics for control and signal processing, and difficult to realize multiple wave modes or apply complex electrode designs. Using thin film SAWs makes it convenient to integrate microelectronics and multiple sensing or microfluidics techniques into a lab-on-a-chip with low cost and multi-functions on various substrates (silicon, glass or polymer). In the work, aluminum nitride (AlN)-based SAW devices were fabricated and characterized for discrete microfluidic (or droplet based) applications. AlN films with a highly c-axis texture were deposited on silicon substrates using a magnetron sputtering system. The fabricated AlN/ Si SAW devices had a Rayleigh wave mode at a frequency of 80.3 MHz (with an electromechanical coupling coefficient k 2 of 0.24 % and phase velocity v p of 5,139 m/s) and a higher-frequency-guided wave mode at 157.3 MHz (with a k 2 value of 0.22 % and v p of 10,067 m/s). Both modes present a large out of band rejection of *15 dB and were successfully applied for microfluidic manipulation of liquid droplets, including internal streaming, pumping and jetting/ nebulization, and their performance differences for microfluidic functions were discussed. A detailed investigation of the influences of droplet size (ranging from 3 to 15 lL) and RF input power (0.25-68 W) on microdroplet behavior has been conducted. Results showed that pumping and jetting velocities were increased with an increase of RF power or a decrease in droplet size.

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Section: Introductionmentioning

confidence: 99%

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Zhou

Pang

Garcia‐Gancedo

et al. 2014

Microfluid Nanofluid

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“…SAW duplexers are tested as well to have a good comparison to the various BAW duplexers. FBAR is used as the naming for the bridge-type technology [2], whereas BAW is used for the SMR-devices [3][4][5][6] (see Fig. 1a, b).…”

Section: Measurement Results (Duplexer)mentioning

confidence: 99%

“…Currently two realizations for the BAW technology can be found worldwide: bridge-type [2] and mirror-type [3][4][5][6] or solidly-mounted-resonator (SMR) BAW resonators. Whereas the former is very much related to MEMS (micro-electromechanical-system), see Fig.…”

Section: Short Review Of Baw Technologiesmentioning

confidence: 99%

Nonlinear effects in acousto-electric devices

Schmidhammer¹

2008

2008 4th European Conference on Circuits and Systems for Communications

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This work deals with the nonlinear behavior of acoustoelectric components. Besides the well known surface acoustic wave (SAW) components also bulk acoustic wave (BAW) devices are meanwhile used in the RF front-end of mobile phones. Especially duplexers have to face the challenge of handling high-power Tx signals together with low-power Rx signals. In order to investigate the nonlinear behavior of such devices single resonators are studied in detail first. Increasing the resonator area by means of cascading lowers the power density on the surface and allows for lower input intercept points of second and third order, IIP2 and IIP3. This investigation gives a first proposal about how to improve current available BAW duplexers. In advance SAW and BAW duplexers of various vendors are measured and compared to each other with respect to their IIP2 and IIP3 values for the very first time. These measurements have been performed at the 3GPP Band II frequency band, which has the same frequency allocation (Tx: 1850 -1910 MHz, Rx: 1930 -1990 MHz) like the IS-95 system.

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“…Since the mid 90's, various companies developed or even sold already microwave filters based on TFBAR's [1][2][3][4][5]. AlN is in most or even all cases the preferred material.…”

Section: Introductionmentioning

confidence: 99%

Is there a better material for thin film BAW applications than A1N?

Muralt

Antifakos

Cantoni

et al.

IEEE Ultrasonics Symposium, 2005.

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Aluminum Nitride is the most favoured material for industrial fabrication of thin film BAW microwave filters. There are certainly good reasons for it, such as the high acoustic quality factor, the high sound velocity, and the excellent chemical compatibility with semiconductor front end materials. The most limiting property of AlN is probably the coupling factor, the determining factor for bandwidth. There are materials exhibiting much larger coupling factors, especially among ferroelectrics. However, no high enough quality factors have been achieved to date with ferroelectric films. In this article, the state of the art of AlN thin film properties is first reviewed. Results on ferroelectric TFBAR's are summarized. The role of domain configuration in ferroelastics is discussed for the case of KNbO 3 . The problematics of losses due to relaxation of domain wall motions is addressed. It is tried to make a conclusion on potentially good candidates. Aluminum nitride, ferroelectrics, bulk acoustic waves I.0-7803-9383-X/05/$20.00 (c) 2005 IEEE

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3.8x3.8 mm/sup 2/ PCS-CDMA duplexer incorporating thin film resonator technology

Cited by 10 publications

References 7 publications

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Nonlinear effects in acousto-electric devices

Is there a better material for thin film BAW applications than A1N?

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