Is there a better material for thin film BAW applications than A1N?

Muralt, Paul; Antifakos, J.; Cantoni, Marco; Lanz, R.; Martin, F.

doi:10.1109/ultsym.2005.1602858

Cited by 64 publications

(49 citation statements)

References 28 publications

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“…The mean transverse coefficients are between -1.0 and -1.2 C/m 2 . Maximum values of -1.25 C/m 2 were reached and are little less than the best published results (Lanz et al 2006;Muralt et al 2005). Also, for the corresponding effective longitudinal coefficient no dependency on the applied rf power could be observed (Fig.…”

Section: Piezoelectric Measurementsmentioning

confidence: 56%

“…Sputtered AlN films exhibit reasonable piezoelectric coefficients of 5.2 pm/V for d 33,f and -1.3 C/m 2 for e 31,f , low dielectric loss of 0.05 % at 10 kHz and low permittivity of 10.2 (Martin et al 2004;Muralt et al 2005;Song et al 2009;Lanz et al 2006). Moreover AlN has excellent thermal, mechanical and chemical stability (Kar et al 2009).…”

Section: Introductionmentioning

confidence: 99%

“…AlN can be grown by various methods like (MO) CVD, ion beam assisted deposition, PLD, MBE or reactive sputtering (Sato et al 2007;Matsumoto and Kiuchi 2006;Ristoscu et al 2005;Iwata et al 2007;Saravanan et al 2005). Typically reactive sputtering is favoured and produces columnar polycrystalline AlN thin films with preferential (0001) orientation to the substrate of different materials (Dubois and Muralt 2001;Muralt et al 2005;Saravanan et al 2005). AlN can be patterned by wet etching using e.g., tetra methyl ammonium hydroxide (TMAH) or dry etching using chlorine or fluorine based plasmas (Saravanan et al 2006;Kim et al 2001;Shul et al 1998;Chen et al 2009).…”

Section: Introductionmentioning

confidence: 99%

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Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

et al. 2012

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A comprehensive study on the complete process for the fabrication of AlN-based MEMS sensors and actuators is presented. Varying the bias voltage during the reactive rf sputtering enables to adjust the stress level in AlN films in the range of about 2 GPa. For the first time the influence of the rf bias power on the whole set of piezoelectric parameters was investigated. It could be shown that the dielectric permittivity, dielectric loss, rocking curve width, effective longitudinal piezoelectric coefficient d 33,f and effective transverse piezoelectric coefficient e 31,f remained unchanged. Further it was observed that piezoelectric AlN films could be deposited at low process temperatures of only 200 °C. Moreover an increase in the e 31,f coefficient with thicker films could be stated. Finally cone formation during wet etching was observed and revealed a formation of {01-12} planes which exhibit a slow etching rate. The c-textured growth of AlN starts directly at the Pt interface

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Section: Piezoelectric Measurementsmentioning

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

et al. 2012

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“…Sputter deposited AlN and the successful development of the thin film electro-acoustic technology have been closely linked together (Aigner 2003;Muralt et al 2005). The development has been primarily driven by one device-the thin-film bulk-acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry.…”

Section: Fbar-backgroundmentioning

confidence: 99%

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Wingqvist

2012

Microsyst Technol

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Sputter deposited aluminum nitride (AlN) thin films have played a central role for the successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device-the thin film bulk acoustic resonator, with its primary use for high frequency filter applications for the telecom industry. Recently, increased piezoelectric properties in AlN through the alloying with scandium nitride have been identified both experimentally and theoretically. This opens up new possibilities for the thin film electro-acoustic technology.Here expectations and discussions are presented on acoustic FBAR sensor performance when based on AlN as well as on such AlN alloys to identify possible benefits and limitations. Inhere, the distinction is made between direct and in-direct (acoustic) use of the piezoelectric effect for sensor applications. These two approaches are described and compared in view of their advantages and possibilities. Especially, the indirect (or acoustic) use is identified as interesting for its versatility and good exploitation of the thin film technology to obtain highly sensitive sensor transducers. It is pointed out that the indirect approach can well be obtained internally in the piezoelectric material structure. Original calculations are presented to support the discussion.

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“…However, the ferroelectric thin films generally have poor quality factors which are very important parameters for the piezoelectric applications as well [2,3]. Some papers reported that the FBARs made of PZT films show very low with the maximum value of 237, and most of them are few tens [2,3], and many researchers have been contributing to various doping and multicompounds compositional PZT based ferroelectric materials for modifying the properties of films by introducing some metals elements to improve the film quality and other properties [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN‐0.94PZT(45/55) Thin Film on Silicon Substrate

Zhang

Zhou

et al. 2015

Journal of Nanomaterials

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The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS). The ternary compound ferroelectric thin films 0.06Pb(Mn 1/3 , Nb 2/3 )O 3 + 0.94Pb(Zr 0.45 , Ti 0.55 )O 3 (0.06PMnN-0.94PZT(45/55)) were deposited on silicon(100) substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55) films were also deposited. The results show that both of thin films show polycrystal structures with the main (111) and (101) orientations. The transverse piezoelectric coefficients are 31, = −4.03 C/m 2 and 31, = −3.5 C/m 2 , respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2 = 147.31 kV/cm and 2 = 135.44 kV/cm, and the saturation polarization = 30.86 C/cm 2 and = 17.74 C/cm 2 , and the remnant polarization = 20.44 C/cm 2 and = 9.87 C/cm 2 , respectively. Moreover, the dielectric constants and loss are = 681 and = 5% and = 537 and = 4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55) thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

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Is there a better material for thin film BAW applications than A1N?

Cited by 64 publications

References 28 publications

Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN‐0.94PZT(45/55) Thin Film on Silicon Substrate

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