3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Niida, Yoshitaka; Kamada, Y.; Ohki, Takao; Ozaki, Shiro; Makiyama, Kozo; Minoura, Yuichi; Okamoto, Naoya; Sato, Masaru; Joshin, K.; Watanabe, Keiji

doi:10.1109/pawr.2016.7440153

Cited by 54 publications

(26 citation statements)

References 8 publications

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“…High-frequency GaN on SiC processes have been developed by HRL Lab since 2006 with the first W-band three-stage GaN MMIC reporting 25 dBm output power with 14% PAE at 80.5 GHz [165]. Recently, Fujitsu developed an 80 nm GaN HEMT process that observes among the highest power density of 3.6W/mm at W-band [166]. A 2 × 1.8 mm 2 MMIC shows a measured output power of 30.6 dBm with a small-signal gain of 18.9 dB and a peak PAE of 12.3% at 86 GHz.…”

Section: W-band (75-110 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: W-band (75-110 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

View full text Add to dashboard Cite

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“…Since today's base station PAs require rather high OUT , they are largely designed in low-cost silicon LDMOS (Laterally Diffused MOSFETs) for sub-3.5 GHz bands, and in GaAs or GaN at higher frequencies, depending on the exact OUT requirements [11,12]. For example, GaN devices are capable of operating at a RF power density of 6-8 W/mm of gate periphery at 4G cellular bands and can deliver an impressive power density of 3.6 W/mm at 86 GHz in continuous-wave (CW) operation [11]. In a separate work, OUT of 3.6 Watt at 83 GHz was achieved in pulse mode [11] that siliconbased PA technologies (LDMOS, SiGe, and CMOS) simply cannot match.…”

Section: The Choice Of Device Technologies 5g Pamentioning

confidence: 99%

“…For example, GaN devices are capable of operating at a RF power density of 6-8 W/mm of gate periphery at 4G cellular bands and can deliver an impressive power density of 3.6 W/mm at 86 GHz in continuous-wave (CW) operation [11]. In a separate work, OUT of 3.6 Watt at 83 GHz was achieved in pulse mode [11] that siliconbased PA technologies (LDMOS, SiGe, and CMOS) simply cannot match. However, silicon-based RF PAs do have the advantages in offering higher monolithic integration with added functionalities (e.g., on-chip digital control/selection Wireless Communications and Mobile Computing 3 OUT requirements per PA (i.e., <20 dBm), which means they could be realizable by silicon-based PAs.…”

Section: The Choice Of Device Technologies 5g Pamentioning

confidence: 99%

A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies

Lie

Mayeda

et al. 2018

Wireless Communications and Mobile Computing

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The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter-wave (mm-Wave) spectrum with multiple-input multiple-output (MIMO) antennas, connecting densely deployed wireless devices for Internet-of-Everything (IoE), and very small latency time for ultrareliable machine type communication, etc. The broadband modulation bandwidth for 5G RF transmitters (i.e., maximum possibly even above 1 GHz) demands high-power efficiency and stringent linearity from its power amplifier (PA). Additionally, the phased-array MIMO antennas with numerous RF front-ends (RFFEs) will require unprecedented high integration level with low cost, making the design of 5G PA one of the most challenging tasks. As the centimeter-wave (cm-Wave) 5G systems will probably be deployed on the market earlier than their mm-Wave counterparts, we will review in this paper the latest development on 15 GHz and 28 GHz 5G cm-Wave PAs extensively, while also covering some key mm-Wave PAs in the literature. Our review will focus on the available options of device technologies, novel circuit and system architectures, and efficiency enhancement techniques at power back-off for 5G PA design.

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“…GaN HEMTs with good performance for application in W band have been reported [ 2 , 3 , 4 , 5 ]. Also, over the past few years, several GaN HEMT based monolithic microwave integrated circuits (MMICs) up to W-band have been developed, due to their applications in high speed wireless communications or radar systems [ 6 ]. A GaN MMIC power amplifier at 91 GHz was reported to have 1.7 W output power that is associated with 11% power added efficiency [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

Mao

et al. 2018

Micromachines

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An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.

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3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Cited by 54 publications

References 8 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

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