3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

Xu, Ru; Chen, Peng; Liu, Menghan; Zhou, Jing; Li, Yimeng; Cheng, Kai; Liu, Bin; Chen, Dunjun; Xie, Zili; Zhang, Rong; Zheng, Yi

doi:10.1109/led.2020.3049086

Cited by 23 publications

(10 citation statements)

References 28 publications

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“…[ 23,41 ] In order to minimize the influence of the Si substrate, a thicker GaN buffer is necessary. Just like our previous work, [ 33–35 ] the BV can be improved from 2.7 to 3.4 kV when the GaN buffer thickness changes from 5 to 7 µm with similar device processing. At present, the leakage introduced by the Si substrate may become a serious problem, limiting the development of UHV AlGaN/GaN SBD on Si.…”

Section: Device Simulation Studiessupporting

confidence: 67%

“…It is well known that the anode field plate (AFP) can effectively modify the EF distribution and then increase the BV. In our previous work, [33][34][35] prior to the fabrication of the SBDs on Si, we also used Silvaco-TCAD to simulate and optimize the AFP parameters. The simulated BV is highly depended on the AFP length and SiN x passivation layer thickness.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…The detailed fabrication process is shown in the Experimental Section, and some process parameters and the main results have been reported in our previous work. [33][34][35][36] For the fabrication of the SBDs on sapphire, we have different ideas evolved from our previous works on Si. First, we have known that the EF in the device is still far below the critical value of 3.4 MV cm −1 at the breakdown point, even with the optimized AFP structure.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…The detailed fabrication process is shown in the Experimental Section, and some process parameters and the main results have been reported in our previous work. [ 33–36 ]…”

Section: Device Design and Fabricationmentioning

confidence: 99%

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

Chen

Zhou

et al. 2022

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GaN‐based lateral Schottky barrier diodes (SBDs) have attracted great attention for high‐power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra‐high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN‐based materials can be practically used in the UHV field? Here, UHV AlGaN/GaN SBDs are demonstrated on sapphire with a BV of 10.6 kV, a specific on‐resistance (RON,SP) of 25.8 mΩ cm2, yielding a power figure‐of‐merit (P‐FOM = BV2/RON,SP) of 4.35 GW cm−2. These devices are designed with single channel and 85‐µm anode‐to‐cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics.

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Section: Device Simulation Studiessupporting

confidence: 67%

Section: Device Design and Fabricationmentioning

confidence: 99%

Section: Device Design and Fabricationmentioning

confidence: 99%

“…The detailed fabrication process is shown in the Experimental Section, and some process parameters and the main results have been reported in our previous work. [ 33–36 ]…”

Section: Device Design and Fabricationmentioning

confidence: 99%

See 2 more Smart Citations

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

Chen

Zhou

et al. 2022

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“…6,7) The breakdown voltage (BV) is directly influenced by the electric field distribution, such that the very strong local electric field at the Schottky contact region shall be avoided. 8) The electric field profile can be homogenized by using such as the gated-edge termination, [9][10][11] tri-anode configuration, 12) field plates (FPs), [13][14][15][16][17][18] floating metal rings, 19,20) p-GaN termination [21][22][23][24] and polarization-induced electric field effect. 25) Among these candidates, FP structures have been widely used because of the easier technical process and the effective charge-coupling effect.…”

Section: Introductionmentioning

confidence: 99%

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Wang,

Huang,

Chu

et al. 2023

Jpn. J. Appl. Phys.

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In this work, by using numerical TCAD simulations, we have systematically studied the impact of different field plates on the electrical characteristics for lateral AlGaN/GaN-based Schottky barrier diodes (SBDs) with recessed anode. The field plate enables the formation of a super-junction. When compared with the reference device without a field plate, the proposed SBDs can generate charge-coupling effect between the field plate and the recessed anode region, which can effectively reduce the electric field magnitude at the metal/sidewall interface. We also find that the electric field profiles can be affected by the field plate length, insulation layer thickness and different insulation materials with various dielectric constants. By doing so, we can enhance the breakdown voltage by homogenizing the electric field distribution in the GaN drift layer. Then, the electric field at the recessed anode region can be decreased and the GaN drift layer can be extensively depleted

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A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Xu,

Chen,

Liu

et al. 2024

Chip

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3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

Cited by 23 publications

References 28 publications

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

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