3.2–9.7 GHz ultra-wideband low-noise amplifier with excellent stop-band rejection

Chang, Jin-Fa; Lin, Yun-Wen

doi:10.1049/el.2011.2147

Cited by 9 publications

(8 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During the 1970s-1990s, engineers usually tried to fabricate integrated wideband amplifiers by utilising the BJT, MESFET, BiFET, HEMT, MOS, CMOS and BiCMOS technologies. In the 2000s, they chiefly focussed on the CMOS, BiCMOS and HEMT processes to design integrated wideband and ultrawideband LNAs, and also, they proposed different solutions such as shunt feedback technique to control gain, bandwidth and noise, common gate topology to realise wideband input [86,88,132,134,142,149,171,174,176,202,206,207,211,214,217,244,250,251,256,262,264,268,277,285,290,298,302,303,308,310,311,321,327,341,349,360] Gain � BW/P dc � (NF − 1) Or 20log 10 134,141,206,213,217,218,231,251,277,290,…”

Section: Discussionmentioning

confidence: 99%

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

“…Considering the works of 2010s, [161–200, 201–250, 251–300, 301–361] it seems that optimum ultrawideband designs in the BiCMOS, the CMOS and the HEMT technologies are allocated to [305, 337, 345], respectively. In 2017, Ch.…”

Section: Uwb Lnamentioning

confidence: 99%

See 2 more Smart Citations

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

See 1 more Smart Citation

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

show abstract

“…This inherent transmission zero improves the selectivity or suppresses any unwanted out-ofband signal of the whole system. Therefore, no extra notch filter is needed to suppress the harmonica response [22], [23] or reject the image signal [24], [25].…”

Section: Introductionmentioning

confidence: 99%

General Dual-Band Impedance Transformer With a Selectable Transmission Zero

Chuang

2016

IEEE Trans. Compon., Packag. Manufact. Technol.

View full text Add to dashboard Cite

This paper presents general design formulas for a dual-band impedance transformer with an inherent and selectable transmission zero. The inherent transmission zero can block unwanted signal or interference and improve the overall circuit performance by suppressing spurious response and enhancing selectivity. The considered load has unequal complex impedances at two uncorrelated frequencies. The proposed transformer consists of three sections of transmission lines and two shunt stubs. The parameters of each transmission line and stub are obtained using the derived analytical formulas without any time-consuming try-and-error procedure or numerical solution. The proposed design formulas reduce the need to use a transmission line with extremely high or low impedance. Two impedance transformers are designed and fabricated. Good agreement between numerical and measured results validates the proposed design formulas.

show abstract

“…Considering the performance of the whole transceiver, Wang et al . [21] and Chang and Lin [22] connected a transistor amplifier and a notch filter to suppress the harmonic responses. Anand et al .…”

Section: Introductionmentioning

confidence: 99%

Analytical design of dual‐band impedance transformer with additional transmission zero

Chuang

2014

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

This study presents a three‐stage dual‐band impedance transformer, capable of providing good match between two circuit modules and generating an additional and selectable transmission zero. The input impedances of the output circuit module are unequally complex at two uncorrelated frequencies. Among the three stages of the proposed transformer, the first stage transforms the complex impedance of the load to become equal resistance at the two frequencies. The second stage cancels out the susceptance produced by the first stage at the two frequencies concurrently and generates the desired transmission zero. The final stage transforms the equal and real impedance to the input circuit module. This study provides analytical formulation of each stage to obtain the required circuit parameters instead of numerical solution or optimisation. The proposed impedance transformer has up to four configurations, subsequently decreasing the possibility of using an extremely narrow or wide transmission line. Simulations and measurement demonstrate the reliability of the proposed structure and design formula. The simulation results agree measured results well, and comply with the specifications.

show abstract

3.2–9.7 GHz ultra-wideband low-noise amplifier with excellent stop-band rejection

Cited by 9 publications

References 6 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

General Dual-Band Impedance Transformer With a Selectable Transmission Zero

Analytical design of dual‐band impedance transformer with additional transmission zero

Contact Info

Product

Resources

About