2D PEA₂SnI₄ Inkjet-Printed Halide Perovskite LEDs on Rigid and Flexible Substrates

Abstract

Lead-free PEA 2 SnI 4 -based perovskite LEDs are successfully inkjet-printed on rigid and flexible substrates. Red-emitting devices (λ max = 633 nm) exhibit, under ambient conditions, a maximum external quantum efficiency (EQE max ) of 1% with a related brightness of 30 cd/m 2 at 10 mA/cm 2 .

Color‐Stable Two‐Dimensional Tin‐Based Perovskite Light‐Emitting Diodes: Passivation Effects of Diphenylphosphine Oxide Derivatives

“…efficiencies (EQEs) over 20%, [7][8][9][10][11][12][13][14][15][16][17] the device performance of Sn-based PeLEDs is still in an earlier stage with maximum EQEs <6%. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] The performance gap between Sn-based and Pb-based perovskites has been ascribed to the trap-limited nonradiative recombination due to their inherent high-density defect states. [34] These traps are usually induced by the prone oxidation of Sn 2+ to Sn 4+ , and faster crystallization process of Sn-based perovskites than Pb analogs.…”

Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities

“…[56,57] To date, (PEA) 2 SnI 4 remains the champion 2D Sn HaP emitter, with record external quantum efficiencies (EQE) in LEDs of 5 % (Figure 4b) [57] and showing promising upscaling prospects. [58] To attain efficient visible emission beyond red, quantum size effects in 2D HaPs must be combined with I À Reproduced with permission from ref. [37].…”

“…[ 56 , 57 ] To date, (PEA) 2 SnI 4 remains the champion 2D Sn HaP emitter, with record external quantum efficiencies (EQE) in LEDs of 5 % (Figure 4b ) [57] and showing promising upscaling prospects. [58] …”

Inkjet-printed h-BN memristors for hardware security

“…1 Moreover, 2D materials synthesized by the LPE method can be deposited on any wafer at low temperature (by inkjet printing, screen printing, and spray, among others 4 ) to pattern wires, electrodes, channels, and other complex devices with irregular shapes. 9 This method has been used to fabricate a plethora of solid-state microelectronic devices, including transistors, 10 photodetectors, 11 capacitors, 12 solar cells, 13 and light emitting diodes 14 (among others).…”