2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

Abstract

The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to a drastic increase in static and dynamic power consumption. The operational limit of nanoscale transistors motivates the exploration of post-CMOS devices like Tunnel FET (TFET), having steeper SS and immunity toward short channel effects. Thus the field of nanoscale 2D-TFET has gained compelling attention in recent times. The nanoscale TFET, with two-dimensional (2D) semiconductor materials, has shown a significant improvement in terms of higher on-state current and lower sub-threshold swing. In this context, the review presented here has comprehensively covered the gradual development and present state-of-arts in the field of nanoscale 2D-TFET design. The relative merits and demerits of each class of 2D materials are identified, which sheds light on the specific design challenges associated with individual 2D materials. Subsequently, the potential device/material co-optimization strategies for the development of efficient TFET designs are highlighted. Next, the experimental development in 2D-TFET design is discussed, and specific synthesis/fabrication challenges for individual material systems are indicated. Finally, an extensive comparative performance study is presented between the simulated as well as experimentally reported potential 2D materials and state-of-the-art bulk material-based TFETs.

Comprehensive advances in the synthesis, fluorescence mechanism and multifunctional applications of red-emitting carbon nanomaterials

“…It causes the electronic transition between the band gaps in the ultraviolet to visible range and sometimes in the infrared region. [221][222][223] Nanosized carbon cores containing conjugated p-domains with signicant functional groups produce multicolour uorescence due to the quantum connement effect, one of the main mechanisms among the others. [224][225][226] It is plausible to tweak the characteristic bandgap transition by modifying the size of the p-domains.…”

Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications

“…A tunnel FET (TFET) based on 2D-material van der Waals (vdWs) heterostructures demonstrates SS smaller than 60 mV/dec due to the tunneling effect. − The band-to-band tunneling (BTBT) has been reported in 2D WSe 2 /SnSe 2 , WSe 2 /MoS 2 , MoS 2 /WS 2 , and BP/MoS 2 heterostructures for electronic/optical applications, − and the 2D vdWs heterostructures reported so far were all operated in air. However, for biosensing, biomarkers in alternative solutions, such as sweat, tears, saliva, and interstitial fluid, need to be detected, and it is necessary that the sensors can operate in solution.…”

A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS

“…In the previously reported works, the electrical transport characteristics of nanoscale FETs have been investigated [ 33 , 34 , 35 , 36 , 37 , 38 ]. Analytical models for threshold voltage and subthreshold behavior of double gate bilayer graphene FET have been explored [ 33 ].…”

“…Analytical models for threshold voltage and subthreshold behavior of double gate bilayer graphene FET have been explored [ 33 ]. The current developments and future prospects for 2D materials-based nanoscale tunneling FETs have been studied [ 34 ]. Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire FETs have been reviewed [ 35 ].…”