2D Gradient Composition Alloys: Excitonic and Dielectric Properties

Kilinc, Muhammed; Jalouli, Alireza; Wang, Peijian; Neureuter, Christian; Zeng, Hao; Thomay, Tim

doi:10.1364/cleo_at.2020.jw2d.19

Cited by 1 publication

(1 citation statement)

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“…The capacitive coupling of a dielectric with thickness t and dielectric constant ϵ is measured using the effective oxide thickness (EOT), defined as EOT = t ϵ SiO 2 / ϵ . The most investigated dielectrics for silicon-based nanoelectronic technology are SiO 2 , HfO 2 , Al 2 O 3 , La 2 O 3 , and ZrO 2 . , Historically, the semiconductor industry has transitioned from SiO 2 to the so-called “high-κ” material HfO 2 . − …”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

Vandenberghe

Osanloo

2023

ACS Appl. Electron. Mater.

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Recent developments in the field of two-dimensional (2D) van der Waals (vdW) dielectrics have captured great interest because of potential applications of 2D materials in future generations of complementary metal-oxide semiconductor (CMOS) technologies. In this Spotlight article, we highlight the progress we recently made toward the discovery of 2D vdW dielectrics, which will be critical to realizing a vdW transistor technology. We provide an overview of how to calculate the dielectric properties of 2D vdW dielectric candidates from first-principles using density functional theory. Furthermore, we show how to quantify the anticipated leakage current through a 2D vdW dielectric. We illustrate the use of hexagonal boron nitride (h-BN), oxyhalides, transition-metal nitride halides (TMNH), and alkaline hydroxides.

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