2D electro-optic probing combined with field theory based multimode wave amplitude extraction: a new approach to on-wafer measurement

David, G.; Schroeder, Werner L.; Jäger, D.; Wolff, I.

doi:10.1109/mwsym.1995.406152

Cited by 13 publications

(3 citation statements)

References 5 publications

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“…Localized measurements at microwave frequencies are primarily motivated by the need for characterization and quality assurance of materials and integrated circuits ͑ICs͒, where far-field scanned beam techniques like electron beam testing, 143 photoemission sampling 144 and electro-optic sampling [145][146][147] are commonly employed. We will focus on scanned probes, discussing techniques that use microwaves for illumination and detection of sample properties.…”

Section: Scanning Near-field Microwave Microscopymentioning

confidence: 99%

High-frequency near-field microscopy

Rosner

Weide

2002

Review of Scientific Instruments

218

133

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Conventional optics in the radio frequency ͑rf͒ through far-infrared ͑FIR͒ regime cannot resolve microscopic features since resolution in the far field is limited by wavelength. With the advent of near-field microscopy, rf and FIR microscopy have gained more attention because of their many applications including material characterization and integrated circuit testing. We provide a brief historical review of how near-field microscopy has developed, including a review of visible and infrared near-field microscopy in the context of our main theme, the principles and applications of near-field microscopy using millimeter to micrometer electromagnetic waves. We discuss and compare aspects of the remarkably wide range of different near-field techniques, which range from scattering type to aperture to waveguide structures.

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Section: Scanning Near-field Microwave Microscopymentioning

confidence: 99%

High-frequency near-field microscopy

Rosner

Weide

2002

Review of Scientific Instruments

218

133

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“…electro-optic probing (David et al, 1995;Mertin et al, 1992), electron-beam probing (Zlobin, 1993), photoemissive probing (Seitz et al, 1990), electric force microscopy (Tabib-Azar and Wang, 2004;Bridges, 2004), electromagnetic probing (Gao and Wolff, 1998). An overview of the different physical principles is given in Mertin et al (1998) and Sayil et al (2005).…”

Section: Introductionmentioning

confidence: 99%

Contactless electromagnetic measuring system using conventional calibration algorithms to determine scattering parameters

2007

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Abstract. In this paper, a contactless measuring system for the determination of the S-parameters of planar circuits is presented. With a contactless measuring system it is possible to characterise a device-under-test (DUT) embedded in a planar circuit environment without cutting the planar transmission lines connecting the DUT. The technique utilizes four identical capacitive probes in conjunction with a vector network analyser (VNA). For the usage of electromagnetic probes compared to other coupling techniques like the electro-optic probing, there is no need for expensive and complex equipment in addition to the typical equipment of a common microwave laboratory. The S-parameters are determined accurately using conventional calibration methods. A simple analytical model for the representation of the basic characteristics is developed. Furthermore, the influences on the S-parameters as a result of a variation in the coupling are presented. With the knowledge of the system characteristics, an accurate contactless measurement system is set up. The comparison between conventional and contactless measurements in a frequency range of 1-20 GHz shows a very good agreement with a phase error smaller than 1 • .

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“…First, electrooptic probing which utilizes the field dependent refractive index (Pockels effect) of the substrate, for example GaAs, to measure the amplitude on a transmissionline [1]. Second, capacitive probes have been used [2], Fig.…”

Section: Introductionmentioning

confidence: 99%

In-circuit, Non-Contacting, S-parameter measurement for planar circuits

Stenarson

Yhland²,

Wingqvist³

2001

57th ARFTG Conference Digest

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A method for measuring S-parameters of a circuit embedded in a planar circuit environment is presented. The method utilizes an inductive and a capacitive probe. Experimental results are presented for probe measurements of reflection coefficient from 0.7 to 20 GHz with good agreement to verifying measurements up to 14 GHz. The method shows great promise for in-circuit Sparameter testing that has previously required physical modification or even complete disassembly to test sub-circuits in a microstrip environment.

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2D electro-optic probing combined with field theory based multimode wave amplitude extraction: a new approach to on-wafer measurement

Cited by 13 publications

References 5 publications

High-frequency near-field microscopy

High-frequency near-field microscopy

Contactless electromagnetic measuring system using conventional calibration algorithms to determine scattering parameters

In-circuit, Non-Contacting, S-parameter measurement for planar circuits

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