Thickness-dependent structural characteristics for a sputtering-deposited chromium monolayer and Cr/C and Cr/Sc multilayers

Jiang, Hui; Wang, Hua; Zhu, Jingtao; Xue, Chunlai; Zhang, Jiayi; Tian, Naxi; Li, Aiguo

doi:10.1107/s1600577518005143

Cited by 4 publications

(4 citation statements)

References 49 publications

(18 reference statements)

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“…The data imply that the contrast between the C and Cr nanolayers and the density of the Cr nanolayers decreased as the Cr deposition power (and thereby, its thickness) decreased. A direct relationship between the density and thickness of Cr nanolayers has been reported in a previous research as well (25). These conclusions can be verified by the HR-TEM analysis also, as discussed earlier.…”

Section: Tailoring Of the Nanointerfaces: Growth Mode And Intermixingsupporting

confidence: 83%

“…Cr is used frequently in carbon-based systems either as a sublayer (strong adhesion to steel materials) or an interlayer (because it displays zero or low intermixing with carbon) (24). According to a previous study, Cr can potentially grow in FM mode when combined with carbon (25). This enables the formation of atomically thick, continuous Cr layers in a DLC medium, which is essential for the design of nanolayered coatings as discussed earlier.…”

Section: Introductionmentioning

confidence: 99%

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Formation of discrete periodic nanolayered coatings through tailoring of nanointerfaces—Toward zero macroscale wear

et al. 2021

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Section: Tailoring Of the Nanointerfaces: Growth Mode And Intermixingsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Formation of discrete periodic nanolayered coatings through tailoring of nanointerfaces—Toward zero macroscale wear

et al. 2021

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“…It was shown that adjusting the pressure in the deposition step can significantly reduce the interface roughness in Mo/Si PMMs [45]. In addition, the roughness is also affected by the thickness of individual layers [46]. Thus, these factors should be considered simultaneously.…”

Section: Structural and Optical Propertiesmentioning

confidence: 99%

Multilayer Reflective Coatings for BEUV Lithography: A Review

Uzoma

Salman

et al. 2021

Nanomaterials

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The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet to the extreme ultraviolet radiation. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Because a BEUV lithographical system contains at least 10 mirrors, the optics’ reflectivity becomes a crucial point. The increasing of a single mirror’s reflectivity by 10% will increase the system’s overall throughput six-fold. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

show abstract

“…It was shown that adjusting the pressure in the deposition step can significantly reduce the interface roughness in Mo/Si PMMs [45]. On the other hand, the roughness is also affected by the thickness of individual layers [46]. Thus, these factors should be considered simultaneously.…”

Section: Structural and Optical Propertiesmentioning

confidence: 99%

Multilayer Reflective Coatings for BEUV Lithography: A Review

Uzhoma¹,

Shabir²,

Hu³

et al. 2021

Preprint

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The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet, deep, to the existing extreme ultraviolet light. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Since a BEUV lithographical system contains at least 10 mirrors, optics’ reflectivity becomes a crucial point. The increasing of a single mirror's reflectivity by 10% will increase the system’s overall throughput by 6 times. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

show abstract

Thickness-dependent structural characteristics for a sputtering-deposited chromium monolayer and Cr/C and Cr/Sc multilayers

Cited by 4 publications

References 49 publications

Formation of discrete periodic nanolayered coatings through tailoring of nanointerfaces—Toward zero macroscale wear

Formation of discrete periodic nanolayered coatings through tailoring of nanointerfaces—Toward zero macroscale wear

Multilayer Reflective Coatings for BEUV Lithography: A Review

Multilayer Reflective Coatings for BEUV Lithography: A Review

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