N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band

Abstract

We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600 nm thick N-rich silicon nitride platform (n=1.92) optimized to match the International Telecommunication Union coarse wavelength division (de)multiplexing standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with Δλ=20 nm, BW∼11 nm, IL<1.5 dB, and XT∼20 dB. Additionally, it showed a high tolerance to dimensional errors <120 pm/nm and low sensitivity to temperature variations <20 pm/°C, respectively. This device had a footprint of 0.02 mm×1.7 mm with the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature <400°C.

Silicon Nitride Photonics for the Near-Infrared

“…The dimensions of the two 4-channel AMMIs summarised in Table IV were optimised to obtain a spectral response with channel spacing~20 nm, IL < 1 dB and XT < 15 dB using FIMMWAVE following the procedure in [37]. The axial positions of the 8 outputs (L i ) were calculated considering the interleaving condition given by equation 5 [33].…”

A Three Demultiplexer C-Band Using Angled Multimode Interference in GaN–SiO2 Slot Waveguide Structures

“…The insertion loss (IL) at the channels output contributes to the examination of the device performance and is given by Equation 5. IL(dB) = −10 log P out P in (5) where P in is the input taper power and P out is the power at the output taper channel.…”

“…Optical demultiplexing devices are key elements in the optical telecommunication system that works with dense wavelength division multiplexing (DWDM) and serve the purpose of increasing the data transfer capacity for the enlarged number of end-users [1]. DWDM apparatus being investigated constantly includes arrayed waveguide gratings (AWGs) [2], multimode interference (MMI) devices [3], photonic crystal fiber [4], and angled MMI (AMMI) [5].…”

Mitigation of photon background in nanoplasmonic all-on-chip Raman sensors

“…For instance, the reflection due to the plasmonic waveguide could be better controlled by a more precise deposition technique such as the atomic layer deposition of gold that furthermore results in an increased Raman response [27]. Another way to improve the architecture is to engineer the MMI so that it acts as a wavelength division multiplexer [28,29] transmitting the excitation beam from a port 1 to 3 with a high transmission and transmitting it inefficiently from port 3 to port 2 while the scattered Raman light is collected in port 3. This would lead to a reduction of the reflected pump light in the output waveguide therefore improving the SBR for even longer/more complex analyzing circuits.…”