Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect

Wu, Meng; Shi, Junjie; Zhang, Min; Ding, Yi-min; Hui, Wang; Cen, Yu-lang; Guo, Wang; Pan, Shing‐Tai; Zhu, Yao-hui

doi:10.1088/1361-6528/aab3f5

Cited by 17 publications

(7 citation statements)

References 50 publications

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“…The conduction band minimum (CBM) and valence band maximum (VBM) are highlighted in red with states being distributed both above and below the Fermi level. The result is in accordance with the previous theoretical results . Meanwhile, the density of states (DOS) of InSe in conjunction with projected DOS of Se and In were also studied, as shown in Figure S1, Supporting Information.…”

Section: Resultssupporting

confidence: 89%

“…In Figure , we scheme the top and side views of InSe nanoribbons of A11H in Figure a and Z6H in Figure c. Similarly to define the width of graphene nanoribbon (GNR), there are mainly two kinds of edge styles: armchair InSe nanoribbon (aISN) and zigzag InSe nanoribbon (zISN), and the widths can be set as the number of dimer/zigzag lines along the transport direction . We found that armchair ribbons are nonmagnetic and direct band‐gap semiconductors, while all zigzag ribbons are metallic, and show intrinsic ferromagnetism on the edge atoms.…”

Section: Resultsmentioning

confidence: 99%

“…Wu et al. reported the modulation of electronic and magnetic properties of InSe nanoribbons by tuning edge effect . Yao et al.…”

Section: Introductionmentioning

confidence: 99%

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Modulation of Electronic Behaviors of InSe Nanosheet and Nanoribbons: The First‐Principles Study

Chen

2019

Advcd Theory and Sims

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Recently, InSe monolayer, a new member added to the 2D materials, has been extensively studied in theories and experiments. Here, the electronic structures of the tunable band-gap semiconductor of 2D InSe nanosheets and the band structure and electronic transport properties of quasi-1D InSe nanoribbons (ISNs) are presented by using the first-principles method. The calculated band structures show that an enlarged indirect band gap appears in 2D InSe nanosheet by external strain, and the gap reduces monotonically as the strain changing from the compression to stretch independent of the zigzag or armchair direction. Moreover, the band structures of quasi-1D ISNs show that armchair ISNs are all nonmagnetic semiconductors, and the zigzag ISNs (zISNs) exhibit metallic regardless of the ribbon width or magnetic states. The non-equilibrium Green's function calculation reveals the electronic transport properties of zISNs with different widths. An obvious negative differential resistive (NDR) effect is found in the current-voltage curves independent of the ribbon width due to the bias-dependent transmission within the voltage window. The tunable band-gap semiconductor behavior of 2D InSe nanosheet and the novel NDR effect in quasi-1D zISNs indicate a very promising application of InSe-based nanomaterials in electronic nanodevices.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

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Modulation of Electronic Behaviors of InSe Nanosheet and Nanoribbons: The First‐Principles Study

Chen

2019

Advcd Theory and Sims

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“…In contrast to H-AISNs, where vertical mirror plane (σ v ) is present, opposite edges of H-ZISNs are terminated by different (In and Se) atoms, which results in the structure with lower symmetry. Compared to H-ZISNs, all armchair InSe nanoribbons are predicted to be nonmagnetic semiconductors with a direct band gap of ∼1 eV at the Γ point [20]. Here, we mainly focus on magnetic properties and, therefore, consider only H-ZISNs.…”

Section: First-principles Calculationsmentioning

confidence: 99%

“…Very recently, density functional theory (DFT) studies point to the possibility of edge magnetic ordering in InSe nanoribbon [20]. Similar to graphene, edge spin-polarization is predicted for all zigzag nanoribbons with/without hydrogen or halogen saturation.…”

Section: Introductionmentioning

confidence: 97%

Tunable half-metallicity and edge magnetism of H-saturated InSe nanoribbons

Zhou

Руденко

et al. 2018

Phys. Rev. Materials

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We report on a theoretical study of electronic and magnetic properties of hydrogen-saturated InSe nanoribbons (H-ZISNs). Based on hybrid-functional first-principles calculations, we find that H-ZISNs exhibit tunable half-metallicity and short-range ferromagnetic order. We first show that p-type doping turns narrow H-ZISNs from semimetal to half-metal with spin-polarization along Interminated edge. This behavior is further analyzed in terms of a two-band tight-binding model, which provides a tractable description of the H-ZISN electronic structure, and serves as a starting point for the determination of magnetic interactions. The dominant exchange interaction determined within the Heisenberg model is found to be ferromagnetic independently of the ribbon width and charge doping. Short-range stability of magnetic order is assessed in terms of the zero-field spin correlation length, which is found to be about 1 nm at liquid nitrogen temperatures. Finally, by calculating spin-dependent transport properties, we find a doping regime in which strongly spinselective electrical conductivities can be observed. Our findings suggest that H-ZISNs are appealing candidates for the realization of spintronic effects at the nanoscale.

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Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors

Hao

Yan

Wang

et al. 2019

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Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2/Si substrate due to lattice mismatch. Here, a catalysis‐free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrates through edge‐homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO2/Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self‐driven vapor–liquid–solid process, which is distinct from the conventional metal‐catalytic vapor–liquid–solid method widely used for growing Si and III–V nanowires. Furthermore, it is demonstrated that the as‐grown InSe nanowire‐based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W−1, ultrahigh detectivity of 1.57 × 1014 Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as‐grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge‐homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrates.

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Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect

Cited by 17 publications

References 50 publications

Modulation of Electronic Behaviors of InSe Nanosheet and Nanoribbons: The First‐Principles Study

Modulation of Electronic Behaviors of InSe Nanosheet and Nanoribbons: The First‐Principles Study

Tunable half-metallicity and edge magnetism of H-saturated InSe nanoribbons

Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors

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