2017
DOI: 10.1186/s11671-017-2266-7
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Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

Abstract: We report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. … Show more

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Cited by 43 publications
(26 citation statements)
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“…Figure 2 compares our results for a monolayer MoSe 2 domain at room temperature with previously reported data 13 , 14 , 33 . Structureless regions at energies less than 1 eV and more than 5 eV are deleted for clarity.…”
Section: Resultssupporting
confidence: 67%
See 3 more Smart Citations
“…Figure 2 compares our results for a monolayer MoSe 2 domain at room temperature with previously reported data 13 , 14 , 33 . Structureless regions at energies less than 1 eV and more than 5 eV are deleted for clarity.…”
Section: Resultssupporting
confidence: 67%
“… Imaginary parts of dielectric spectra of monolayer MoSe 2 at room temperature compared to data previously reported in refs 13 , 14 , 33 . …”
Section: Resultsmentioning
confidence: 78%
See 2 more Smart Citations
“…The error bars in the fit for temperature-dependent optical band gap are approximately 0.5%. Notably, in monolayer MoSe 2 , a previous ellipsometric study determined only the linear temperature dependence of the optical band gap for 300-800 K 22 . Figure 5 presents the absorption spectra for the higher photon energy regions (> 2.5 eV) of monolayer MoS 2 , MoSe 2 , WS 2 , and WSe 2 , which have a considerably higher intensity than those for the A and B exciton peaks.…”
Section: Resultsmentioning
confidence: 99%