Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Olejník, K.; Schuler, Vivien; Martí, X.; Novák, V.; Kašpar, Zdeněk; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, Manuel; Gambardella, Pietro; Jungwirth, T.

doi:10.1038/ncomms15434

Cited by 178 publications

(162 citation statements)

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“…36(a) and 38]: in CuMnAs via global electrical measurements (anisotropic magnetoresistance) Olejnik et al, 2017a) as well as via local direct imaging of the antiferromagnetic domains (x-ray magnetic linear dichroism photoelectron emission microscopy) (Grzybowski et al, 2017), and in Mn 2 Au via global electrical measurements (anisotropic magnetoresistance) (Bodnar et al, 2017;Meinert, Graulich, and Matalla-Wagner, 2017). CuMnAs and Mn 2 Au crystals possess local inversion symmetry breaking in bulk crystal, as explained (see also Table III), and display anisotropic magnetoresistance allowing for the electrical detection of the order parameter orientation.…”

Section: A Manipulation By Inverse Spin Galvanic Torquementioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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Section: A Manipulation By Inverse Spin Galvanic Torquementioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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“…The electrical switching in antiferromagnetic bit cells can be combined with the electrical readout via ohmic anisotropic magnetoresistance, which, in present devices, is of the order of ~1% [154][155][156]. Previously, ~100% magnetoresistance was demonstrated in tunneling devices with antiferromagnetic electrodes and where the reorientation of antiferromagnetic moments was controlled by a magnetic field via an attached ferromagnet [154].…”

Section: Electrical Reading Of Information In Antiferromagnetsmentioning

confidence: 99%

“…CuMnAs, Mn 2 Au), a local relativistic field is generated, which points in the opposite direction on magnetic atoms with opposite magnetic moments. The resulting field-like Néel spin-orbit torque has been demonstrated to allow for a reversible switching of antiferromagnetic moments in microelectronic bit cells by electrical current pulses of a length ranging from milliseconds to picoseconds [155,156]. The key challenge in the Néel spin-orbit torque switching is keeping the current density sufficiently low when downscaling the pulse-length in order to realize energy efficient, ultrafast electrical writing of information in antiferromagnets.…”

Section: Current and Future Challenges Electrical Writing Of Informamentioning

confidence: 99%

“…Memory and logic in antiferromagnets: Cross-shape four-point bit cells allow for applying writing pulses along two orthogonal current paths preferring antiferromagnetic domains with one or the other orthogonal Néel vector orientation [154][155][156]. When stable, these can represent logical 0 and 1 ( figure 20).…”

Section: Electrical Reading Of Information In Antiferromagnetsmentioning

confidence: 99%

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The 2017 Magnetism Roadmap

Sander

Valenzuela

Makarov

et al. 2017

J. Phys. D: Appl. Phys.

320

207

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Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. More importantly, key developments have changed the research landscape in very relevant ways, so that a novel view onto some of the most crucial developments is warranted, and thus, this 2017 Magnetism Roadmap article is a timely endeavour. The change in landscape is hereby not exclusively scientific, but also reflects the magnetism related industrial application portfolio. Specifically, Hard Disk Drive technology, which still dominates digital storage and will continue to do so for many years, if not decades, has now limited its footprint in the scientific Topical ReviewOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. and research community, whereas significantly growing interest in magnetism and magnetic materials in relation to energy applications is noticeable, and other technological fields are emerging as well. Also, more and more work is occurring in which complex topologies of magnetically ordered states are being explored, hereby aiming at a technological utilization of the very theoretical concepts that were recognised by the 2016 Nobel Prize in Physics.Given this somewhat shifted scenario, it seemed appropriate to select topics for this Roadmap article that represent the three core pillars of magnetism, namely magnetic materials, magnetic phenomena and associated characterization techniques, as well as applications of magnetism. While many of the contributions in this Roadmap have clearly overlapping relevance in all three fields, their relative focus is mostly associated to one of the three pillars. In this way, the interconnecting roles of having suitable magnetic materials, understanding (and being able to characterize) the underlying physics of their behaviour and utilizing them for applications and devices is well illustrated, thus giving an accurate snapshot of the world of magnetism in 2017.The article consists of 14 sections, each written by an expert in the field and addressing a specific subject on two pages. Evidently, the depth at which each contribution can describe the subject matter is limited and a full review of their statuses, advances, challenges and perspectives cannot be fully accomplished. Also, magnetism, as a vibrant research field, is too diverse, so that a number of areas will not be adequately represented here, leaving space for further Roadmap editions in the future. However, this 2017 Magnetism Roadmap article can provide a frame that will enable the reader to judge where each subject and magnetism research field stands overall today and which directions it might take in the foreseeable future.The first mater...

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“…Further it was shown that the magnetic domain orientation was correlated to the electrical resistance 6 and used in a multilevel memory device. 7 Both exchange-bias and AF dynamics depend on the AF domain structure, hence a detailed understanding of domain formation and possibly domain engineering are both essential for further device development. 1,5,8 The mechanisms responsible for domain formation in AF materials are not as straightforward as in the case of FM materials, since there is no macroscopic demagnetizing field.…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Magnetic domain configuration of (111)-oriented LaFeO3 epitaxial thin films

et al. 2017

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In antiferromagnetic spintronics control of the domains and corresponding spin axis orientation is crucial for devices. Here we investigate the antiferromagnetic axis in (111)-oriented LaFeO3/SrTiO3, which is coupled to structural twin domains. The structural domains have either the orthorhombic a- or b-axis along the in-plane ⟨11¯0⟩ cubic directions of the substrate, and the corresponding magnetic domains have the antiferromagnetic axis in the sample plane. Six degenerate antiferromagnetic axes are found corresponding to the ⟨11¯0⟩ and ⟨112¯⟩ in-plane directions. This is in contrast to the biaxial anisotropy in (001)-oriented films and reflects how crystal orientation can be used to control magnetic anisotropy in antiferromagnets.

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Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Cited by 178 publications

References 20 publications

Antiferromagnetic spintronics

Antiferromagnetic spintronics

The 2017 Magnetism Roadmap

Magnetic domain configuration of (111)-oriented LaFeO3 epitaxial thin films

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