Coupling dynamics of Nb/Nb<sub>2</sub>O<sub>5</sub>relaxation oscillators

Li, Shuai; Liu, Xinjun; Nandi, Sanjoy Kumar; Venkatachalam, Dinesh Kumar; Elliman, R. G.

doi:10.1088/1361-6528/aa5de0

Cited by 31 publications

(19 citation statements)

References 28 publications

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“…Motivated from the above discussion, Memristor-CNNs (M-CNNs) [8] have recently appeared as a compact solution for the design of bio-inspired systems, where pattern formation can emerge across a nanoscale hardware platform. Taking into account some noticeable contributions in the literature, locally active memristors have been employed in cell level neural circuit designs [9], [10], while oscillatory dynamics of locally active memristors have been discussed in [11], [12]. The theory of M-CNNs has been comprehensively investigated in [13], [14] and an example for pattern formation in an M-CNN, employing locally active memristors, is introduced in [15], where the coupling among the cells is established via a resistor-capacitor one port.…”

Section: Introductionmentioning

confidence: 99%

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO_x Memristors

Demirkol

Ascoli

Messaris

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents the analytical investigation of complex pattern formation in a Memristor Cellular Nonlinear Network (M-CNN) by applying the theory of local activity. The proposed M-CNN has the conventional two dimensional (2D) planar structure, where all the memristive cells are identical and resistively coupled to each other. The single cell is composed of a suitable combination of a DC voltage source, a bias resistor, a locally active NbOx memristor, and a capacitor. The locally active memristor has a simplified generic form, enhancing the simulation speed, and a functional AC equivalent circuit, facilitating further inspections. The stability analysis of the single cell is followed by the extraction of the parameters of the local activity, edge-of-chaos, and sharp-edge-of-chaos domains. Simulation results demonstrate that pattern formation can emerge in a dissipatively coupled M-CNN with locally active memristors.

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Section: Introductionmentioning

confidence: 99%

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO_x Memristors

Demirkol

Ascoli

Messaris

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…As a nonlinear locally-active device, S-type LAM is conceptually simple for building oscillating circuit without pure negative resistor, and the local active region renders the oscillating system capable to amplify extermely small fluctuation in energy. Therefore, S-type LAM is preferred over other memristor in the design of chaotic oscillator [35][36][37]. In Ref [30], Wang designed a S-type LAM-based chaotic oscillator by using a resistor, a capacitor and an inductor.…”

Section: Introductionmentioning

confidence: 99%

A S-Type Bistable Locally-Active Memristor and Its Application in Oscillator Circuit

Xie

et al. 2021

Preprint

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In this paper, a S-type memristor with tangent nonlinearity is proposed. The introduced memristor can generate two kinds of stable pinched hysteresis loops with initial conditions from two flanks of the initial critical point. The power-off plot verifies that the memristor is nonvolatile, and the DC V-I plot shows that the memristor is locally active with the locally-active region symmetrical about the origin. The equivalent circuit of the memristor, derived by small-signal analysis method, is used to study the dynamics near the operating point in the locally-active region. Owing to the bistable and locally-active properties and S-type DC V-I curve, this memristor is called S-type BLAM for short. Then, a new Wien-bridge oscillator circuit is designed by substituting one of its resistances with S-type BLAM. It find that the circuit system can produce chaotic oscillation and complex dynamic behavior, which is further confirmed by analog circuit experiment.

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“…All authors are with Electrical Engineering, IIT Bombay, Mumbai, India-400076. S. Lashkare is physics like VO2 [6] and NbO2 (insulator to metal transition) [7], [8], TaOx (conductive volatile filament) [9], and spintronics based devices have been proposed [10].…”

Section: Introductionmentioning

confidence: 99%

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO₃-Based RRAM

Sakhuja

Lashkare

Jana

et al. 2020

IEEE Trans. Electron Devices

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𝐏𝐫𝐌𝐧𝐎 𝟑 (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a compact oscillator to enable highly scaled oscillatory neurons, which enable oscillatory neuromorphic systems found in the human cortex. Hence, it is vital to understand the physical mechanisms behind such a volatile hysteretic behavior to provide useful insights in developing a device for various neuromorphic applications. In this paper, we present a comprehensive investigation of the transient characteristics and propose a physical mechanism to replicate the observations by simulations. First, we investigate the complex dynamics of the hysteresis with the voltage ramp rate. We observe that the voltage window initially increases and later decreases as the ramp rate is increased -while the current window reduces monotonically. Second, an analytical electrothermal model based on space charge limited current (SCLC) and Fourier Heat equation is proposed to model the co-dependent heat and current flow. Finally, we show that the interplay between the self-heating due to the current and the current dependence on the temperature is accurately modeled to reproduce the hysteresis dependence on the various voltage ramp rate. Such a detailed understanding of the device PMO RRAM volatile hysteresis may enable efficient device design required in neuromorphic computing applications.

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Coupling dynamics of Nb/Nb₂O₅relaxation oscillators

Cited by 31 publications

References 28 publications

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO_x Memristors

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO_x Memristors

A S-Type Bistable Locally-Active Memristor and Its Application in Oscillator Circuit

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO₃-Based RRAM

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Coupling dynamics of Nb/Nb2O5relaxation oscillators

Cited by 31 publications

References 28 publications

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbOx Memristors

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbOx Memristors

A S-Type Bistable Locally-Active Memristor and Its Application in Oscillator Circuit

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM

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Coupling dynamics of Nb/Nb₂O₅relaxation oscillators

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO_x Memristors

Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbO_x Memristors

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO₃-Based RRAM