28-Gbps 850-nm oxide VCSEL development and manufacturing progress at Avago

A 50 Gb/s NRZ Modulated 850 nm VCSEL Transmitter Operating Error Free to 90 °C

“…1. There are several recent reliability reports on commercially viable 28 Gb/s 850nm VCSELs which also use Indium in the active region [35] [36]. These two reports reached similar conclusions with respect the activation energy (Ea>1eV) and current acceleration factor (n>2).…”

“…These two reports reached similar conclusions with respect the activation energy (Ea>1eV) and current acceleration factor (n>2). The 6um VCSEL device aperture used in this study is slightly smaller, 15%, than the 6.5um device reported in [35]. The current density used, 24.4kA/cm 2 , is also only 15% higher than the 21.0kA/cm 2 used for the device reported in [35].…”

“…The current density used, 24.4kA/cm 2 , is also only 15% higher than the 21.0kA/cm 2 used for the device reported in [35]. At 6.9mA and 70C ambient, the VCSEL in this study would be expected to have comparable reliability to the data shown in figure 5.3 of reference [35] with a time to 1% failure in the range of 80 -90 years. Extending this analysis to 6.9mA at 90°C ambient would result in an estimated time to 1% failure of >15 years [37].…”

“…The 6um VCSEL device aperture used in this study is slightly smaller, 15%, than the 6.5um device reported in [35]. The current density used, 24.4kA/cm 2 , is also only 15% higher than the 21.0kA/cm 2 used for the device reported in [35]. At 6.9mA and 70C ambient, the VCSEL in this study would be expected to have comparable reliability to the data shown in figure 5.3 of reference [35] with a time to 1% failure in the range of 80 -90 years.…”