Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

Li, Jin; Zhang, Dainan; Zhang, Huaiwu; Fang, Jiayuan; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

doi:10.1038/srep34030

Cited by 10 publications

(7 citation statements)

References 28 publications

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“…1. The present discussion in the literature regarding the band gap evolution of GeSn alloys is based on the assumption that with increasing Sn composition there is a sharp transition from GeSn being an indirect band gap material to a direct one 18,19,25–27 . However, there is a large degree of uncertainty for the Sn concentration at which this transition occurs, with typical values ranging from ~6–11% Sn 28–31 .…”

Section: Introductionmentioning

confidence: 99%

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Eales

Marko

Schulz³

et al. 2019

Sci Rep

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In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy composition and has significant Γ-character even at low (6%) Sn concentrations. The evolution of the Γ-character is due to Sn-induced conduction band mixing effects, in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such as Al1−xGaxAs. Understanding the band mixing effects is critical not only from a fundamental and basic properties viewpoint but also for designing photonic devices with enhanced capabilities utilizing GeSn and related material systems.

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Section: Introductionmentioning

confidence: 99%

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Eales

Marko

Schulz³

et al. 2019

Sci Rep

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“…Nonequilibrium surface growth by means of molecular beam epitaxy (MBE) is one of the most widely used techniques to fabricate thin film devices for various technological applications [1][2][3][4]. Since the growth conditions can be precisely controlled, MBE also serves as an exemplary experimental setup to study fundamental aspects of nonequilibrium statistical mechanics [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Modeling of nonequilibrium surface growth by a limited-mobility model with distributed diffusion length

Martynec

Klapp

2019

Phys. Rev. E

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Kinetic Monte-Carlo (KMC) simulations are a well-established numerical tool to investigate the time-dependent surface morphology in molecular beam epitaxy (MBE) experiments. In parallel, simplified approaches such as limited mobility (LM) models characterized by a fixed diffusion length have been studied. Here, we investigate an extended LM model to gain deeper insight into the role of diffusional processes concerning the growth morphology. Our model is based on the stochastic transition rules of the Das Sarma-Tamborena (DT) model, but differs from the latter via a variable diffusion length. A first guess for this length can be extracted from the saturation value of the meansquared displacement calculated from short KMC simulations. Comparing the resulting surface morphologies in the sub-and multilayer growth regime to those obtained from KMC simulations, we find deviations which can be cured by adding fluctuations to the diffusion length. This mimics the stochastic nature of particle diffusion on a substrate, an aspect which is usually neglected in LM models. We propose to add fluctuations to the diffusion length by choosing this quantity for each adsorbed particle from a Gaussian distribution, where the variance of the distribution serves as a fitting parameter. We show that the diffusional fluctuations have a huge impact on cluster properties during submonolayer growth as well as on the surface profile in the high coverage regime. The analysis of the surface morphologies on one-and two-dimensional substrates during sub-and multilayer growth shows that the LM model can produce structures that are indistinguishable to the ones from KMC simulations at arbitrary growth conditions.

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“…% Sn). Formation of a metastable Ge–Sn alloy through electrodeposition is highly interesting, as Sn and Ge are immiscible at room temperature under equilibrium and alloys are prepared through high input energy techniques such as sputtering or other physical evaporation techniques. , Early studies revealed that electrodeposition of Ge could be induced in the presence of a second metal ion in the electrolyte such as Ni, Cu, or Ga because in these cases the corresponding alloy is thermodynamically favored and provides a reaction pathway. , For instance, Zhao et al have shown that the formation of a Cu 3 Ge thin film on a gold substrate by electrodeposition is mainly related to the formation of a more thermodynamically favored Ge–Cu bond. However, according to the Ge–Sn phase diagram, the formation of a Ge–Sn alloy is thermodynamically prohibited.…”

Section: Resultsmentioning

confidence: 99%

Single-Step Electrochemical Liquid–Liquid–Solid-Assisted Growth of Ge–Sn Nanostructures as a Long-Life Anode Material with Boosted Areal Capacity

Khabazian

Sanjabi

Campo

et al. 2022

ACS Appl. Energy Mater.

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A single-step electrochemical liquid–liquid–solid (ec-LLS) deposition route is developed for growing nanowire-based Ge–Sn nanostructures with tailored morphologies and compositions. Composite films, submicron fibers, nanowires, and also three-dimensional (3D) hierarchical structures are fabricated in the same electrolyte, simply by varying the electrodeposition current density. COMSOL simulations indicate that the current density is able to generate sufficient Joule heating to activate the ec-LLS growth mode. A concomitant reduction of Ge and Sn ions during Sn-doped Ge nanowire growth results in the formation of multicomponent heterostructures comprising non-equilibrium Ge x Sn1–x , pure Sn, and Sn-rich amorphous phases. The proposed deposition technique enables the fabrication of high mass loading electrodes with enhanced Li storage properties. In particular, a 3D hierarchical structure composed of 38 wt % Ge delivers a specific capacity of 938 mA h g–1 after 400 cycles, corresponding to a high areal capacity of 4.95 mA h cm–2. We believe that the present study could be considered as a low-cost procedure for the industrial fabrication of anode materials for high-performance Li-ion battery applications.

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Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

Cited by 10 publications

References 28 publications

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Modeling of nonequilibrium surface growth by a limited-mobility model with distributed diffusion length

Single-Step Electrochemical Liquid–Liquid–Solid-Assisted Growth of Ge–Sn Nanostructures as a Long-Life Anode Material with Boosted Areal Capacity

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