Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

Hou, Jiwei; Wang, Xi; Fu, Deyi; Ko, Changhyun; Chen, Yabin; Sun, Yan; Lee, Sangwook; Wang, Kevin X.; Dong, Kaichen; Sun, Yinghui; Tongay, Sefaattin; Jiao, Liying; Yao, Jie; Liu, Kai; Wu, Junqiao

doi:10.1002/smll.201601021

Cited by 33 publications

(27 citation statements)

References 48 publications

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“…This suggests an unnegligible role of the substrate surface, as revealed in most of 2D systems [44][45][46]. The high-energy electrons will irradiate the 2D layers and finally inject into a depth of SiO 2 /Si substrate.…”

Section: Lettersmentioning

confidence: 99%

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Hong

Hou

et al. 2018

Sci. China Mater.

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Two-dimensional (2D) materials have attracted growing attention since the discovery of graphene [1]. Transition metal dichalcogenide (TMD) semiconductors, such as MoS 2 and WS 2 , became popular materials in recent years, because they usually have intrinsic bandgaps and an indirect-to-direct bandgap transition from bulk to monolayer limit [2][3][4][5][6]. Although graphene and TMDs are promising materials in field-effect devices [7][8][9], their heterostructures are more advanced in charge-splitting functions for the applications in optoelectronic devices [10][11][12][13][14][15]. In these heterostructure devices, graphene has been utilized as an effective electrode to reduce the contact resistance in 2D semiconductor devices due to its ultra-flat surface, high carrier mobility, and gate-tunable Fermi level. The diversity of 2D semiconductors has also enabled 2D heterostructures with multiple functionalities to meet various demands in applications [16][17][18][19][20][21].Modulation of 2D heterostructure properties is desired for their diverse applications. Defect engineering of materials, which can be achieved by irradiation of particles such as electrons or ions, provides an effective way to modulate properties of materials, as proven in silicon industry. Currently, diverse irradiation sources, including argon ions (Ar + ) [22,23] [22], and an improvement in electrical conductivity after a mild oxygen treatment in MoS 2 [32]. It has been shown that upon electron irradiation, 2D TMDs can be modified with vacancy defects and doped by filling the vacancies with impurity atoms [25], and graphene is also doped with electrons or holes depending on the irradiation energy [26]. So far these effects of irradiation have been mostly investigated in single 2D materials. Effects of irradiation on 2D heterostructures have yet to be well explored, and whether the build-up of 2D heterostructures could circumvent the degradation of the materials remains a question.In this work, we found that the build-up of heterostructures could partly hinder the degradation of the properties of monolayer MoS 2 against electron irradiation damage. By insertion of a monolayer graphene between MoS 2 and the substrate, the photoluminescence (PL) from MoS 2 /graphene heterostructure area is always stronger in intensity and more robust in energy under electron irradiation, in contrast to the dramatic PL shift in the MoS 2 monolayer area. The improvement is attributed to a blocking effect of graphene that prevents MoS 2 from being affected by the substrate. Raman spectra and electrical transfer properties were also investigated to systematically reveal the effect of electron irradiation on the MoS 2 /graphene heterostructure. Our work not only deepens the understanding of irradiation effects on 2D heterostructures, but also paves the way to the design of novel irradiation-resistant devices.Electron irradiation exists commonly in environments ranging from materials observation under electron mi-

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Section: Lettersmentioning

confidence: 99%

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Hong

Hou

et al. 2018

Sci. China Mater.

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“…Subsequently, a laser is focused onto the film to locally heat the VO 2 to the M‐phase (Point C). When the laser is turned off or moves to other regions, the laser‐heated region will still stay in the M‐phase (Point D) owing to the hysteresis . Hence, a nonvolatile M‐phase pattern is written onto the I‐phase film.…”

mentioning

confidence: 99%

A Lithography‐Free and Field‐Programmable Photonic Metacanvas

et al. 2017

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The unique correspondence between mathematical operators and photonic elements in wave optics enables quantitative analysis of light manipulation with individual optical devices. Phase-transition materials are able to provide real-time reconfigurability of these devices, which would create new optical functionalities via (re)compilation of photonic operators, as those achieved in other fields such as field-programmable gate arrays (FPGA). Here, by exploiting the hysteretic phase transition of vanadium dioxide, an all-solid, rewritable metacanvas on which nearly arbitrary photonic devices can be rapidly and repeatedly written and erased is presented. The writing is performed with a low-power laser and the entire process stays below 90 °C. Using the metacanvas, dynamic manipulation of optical waves is demonstrated for light propagation, polarization, and reconstruction. The metacanvas supports physical (re)compilation of photonic operators akin to that of FPGA, opening up possibilities where photonic elements can be field programmed to deliver complex, system-level functionalities.

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“…Strongly correlated materials have also been utilized to modulate the optical properties of 2D semiconductors. When interfacing MoS2 with VO2, which is a textbook Mott insulator and exhibits a metal-insulator transition (MIT) at around 68 ℃, both the Raman and PL properties of MoS2 are strongly modulated by the VO2 substrate [64,65]. Both the E2g and A1g modes of MoS2 are thus found to have red shifts when heating the VO2 substrate to metal phase [65].…”

Section: D Semiconductors/strongly Correlated Oxide Heterostructuresmentioning

confidence: 99%

“…Meanwhile, the PL intensity is drastically enhanced because the excitons and trions are enhanced during the MIT process. However, Hou et al attributed this enhancement to an optical interference effect due to the different refractive indexes of the two VO 2 phases [64]. In the EuO x /graphene heterojunction, the Eu atoms will generate proximity induced ferromagnetism in graphene.…”

Section: D Semiconductors/strongly Correlated Oxide Heterostructuresmentioning

confidence: 99%

“…For instance, VO2 also possesses a hysteresis during its MIT. When interfacing MoS2 with VO2, the PL intensity of MoS2 will be enhanced or weakened during the MIT of VO2 due to an interference effect [64]. Lasers can be used to introduce additional heat at controlled positions, and the phase change can be maintained at the ambient temperature even if the laser is turned off.…”

Section: Nonvolatile Memory and Data Storagementioning

confidence: 99%

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Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

2017

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Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS 2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

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Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

Cited by 33 publications

References 48 publications

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

A Lithography‐Free and Field‐Programmable Photonic Metacanvas

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

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