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doi:10.1002/pssb.v241:3

Cited by 8 publications

(8 citation statements)

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“…6,17,22 On the other hand, it has been experimentally and theoretically verified that the unintentionally doped ZnO is n-type and a large number of donor-type defects exist in the ZnO layer. 3,4 The presence of donor-type defects, E 3 and L 1 , with a level situated around 0.2$0.3 eV below the conduction band has been observed in both single-crystal and polycrystalline ZnO films. 23,24 Therefore, the 392 nm emission is attributed to the electron transition from the donor-type E 3 or L 1 below the conduction band to the valence band.…”

Section: Resultsmentioning

confidence: 99%

“…1,2 In virtue of the relatively large exciton binding energy (60 meV) and direct wide bandgap (3.37 eV) at room temperature (RT), ZnO has been regarded as one of the most promising candidates for UV LEDs. [3][4][5] Although ZnO p-n homojunction LEDs have been fabricated, reliable and reproducible production of p-type ZnO films is still challenging due to its self-compensation mechanism which severely constrains the efficiency of ZnO homojunction LEDs. 6,7 As an intriguing alternative, p-n heterojunction LEDs with the ZnO as the ntype layer has been proposed.…”

Section: Introductionmentioning

confidence: 99%

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Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Zhang

Yin

et al. 2011

Journal of Applied Physics

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The effects of the growth temperature and thickness of AlN layer on the electroluminescence (EL) performance of n-ZnO/AlN/p-GaN devices have been systematically investigated. It is found that the higher growth temperature of AlN layer (T AlN) may facilitate the improvement of EL performance of the device, which is attributed to that the crystalline quality of AlN layer improves with increasing growth temperatures T AlN. Besides the crystallinity of AlN layer, the thickness of AlN barrier layer plays an important role on the performance of the device. The thinner AlN layer is not enough to cover the whole surface of GaN, while the thicker AlN layer is unfavorable to the tunneling of carriers and many of electrons will be captured and recombined nonradiatively via the deep donors within the thick AlN layer. We have demonstrated that the AlN layer at the growth temperature of 700 C with an optimized thickness of around 10 nm could effectively confine the injected carriers and suppress the formation of interfacial layer, thus, the EL performance of n-ZnO/AlN/p-GaN device could be significantly improved. V

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Zhang

Yin

et al. 2011

Journal of Applied Physics

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“…1 In spite of these expectations, this topic remains a source of conjecture, with the possibility of reliably achieving the required levels of shallow p-doping still under debate. 2,3 Substitutional doping with nitrogen (N) has been the predominant experimental approach 4 because of obvious features including its trivalence and similar ionic radius to the oxygen ion O 2À .…”

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confidence: 99%

Clustering of N impurities in ZnO

Furthmüller¹,

Hachenberg²,

Schleife³

et al. 2012

Applied Physics Letters

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Ab initio density functional theory and quasiparticle calculations for the incorporation of nitrogen atoms on oxygen sites in ZnO are presented. It is demonstrated that clustering of N atoms is energetically favored over the isolated N0 substitutional impurity. Tetrahedrons of N0 give rise to promising quasiparticle band structures with impurity states slightly above the valence band maximum (VBM), which, however, shift to higher energies with increasing negative ionization. The lowest recharging level ɛ(0/−) tends to a value 0.4 eV above the VBM, which is too deep for anything other than a weak p-doping.

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“…First, it stems from the mere fabrication of self-assembled (SA) II-VI NRs, whose exploration is extremely scarce in spite of their importance for detection and optoelectronics applications in a high-energy portion of the spectral range. 7,30,31 Second, with no need for capping, and employing very moderate annealing temperatures, the fabrication process is short, simple, and requires low thermal budget. Finally, by closely monitoring the entire sequence of surface evolution in situ with STM, in a series of controlled experiments under varying In coverage, we first observed formation of In 2 Te 3 interfacial layer, followed by SA formation of CdInTe NRs on top of In 2 Te 3 /CdZnTe(110), and finally NR transformation into camel-humps upon higher temperature annealing.…”

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confidence: 99%

“…At the same time, as the Cd concentration and [Cd]/[Te] ratio at the surface increase, the surface concentration of In decreases, indicating plausible Cd surface segregation via Cd-In exchange reaction in course of annealing. Surface segregation is a well-known phenomenon in III-V, 22,39-41 II-VI, 30,42 and IV-IV (Ref. 43) heterostructures.…”

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confidence: 99%