Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO_2 insulator layer

Ke, Shaoying; Lin, Shaoming; Li, Xin; Li, Jun; Xu, Jianfang; Cheng, Li; Chen, Songyan

doi:10.1364/oe.24.001943

Cited by 13 publications

(14 citation statements)

References 32 publications

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“…To solve this problem, researchers proposed the wafer-bonding technique to achieve the low TDDs of the Ge layer on the insulator, which is expected to decrease the dark current as much as possible. Based on the wafer-bonding technique, Shaoying Ke et al [ 124 ] theoretically investigated the wafer-bonded Ge/Si APDs in terms of tunneling effect and interface state ( Figure 54 ). A thin GeO 2 insulator layer is inserted between the Ge absorption layer and the Si charge layer.…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…The narrow electrode space results in high fT due to the fast carrier collection path. Last, the f3dB for the GeSn photodetector can be degraded due to the surface recombination at GeSn/Al2O3 [42,44,45]. Thus, to achieve the improved f3dB for the photodetectors, the optimized photodetector design and advanced surface passivation are required.…”

Section: Frequency Response (3db Bandwidth)mentioning

confidence: 99%

Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications

et al. 2022

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In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-oninsulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it is revealed that the photodetectors can potentially detect the wavelength beyond 2,200 nm. The dark current density was measured to be 4.6 A/cm 2 for GeSnOI waveguide-shaped photodetectors. The 3dB bandwidth was observed to be 1.26 and 0.81 GHz at 1,550 and 2,000 nm wavelengths, respectively. This work opens up an opportunity for lowcost 2 µm wavelength photodetection on the GeSn/Ge interface-free GeSnOI platform.

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“…The research interest on high-performance Avalanche PhotoDiodes (APDs), which exhibit an internal carrier multiplication mechanism caused by internal avalanche gain [1][2][3][4][5] , has been increasing with the development of optical fiber communication. APDs must have a very low noise and a high response to increase sensitivity in low-light-level detection.…”

Section: Introductionmentioning

confidence: 99%

Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

Zheng

et al. 2019

Tinshhua Sci. Technol.

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A novel lateral Ge=Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge=Si interface in the vertical direction. Modulating the Si mesa thickness (0 0:4 m) and impurity concentration of the intrinsic Si substrate (1 10 16 4 10 16 cm 3 ) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0:3 m, and the impurity concentration of the Si substrate is 2 10 16 cm 3 , the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of 246 under 1:55 m incident light power of 22:2 dBm, which increases with decreasing light intensity.

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Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO_2 insulator layer

Cited by 13 publications

References 32 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications

Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

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