26.3 A mm-Wave Power Amplifier for 5G Communication Using a Dual-Drive Topology Exhibiting a Maximum PAE of 50% and Maximum DE of 60% at 30GHz

Garay, Edgar Felipe; Munzer, David; Wang, Hua

doi:10.1109/isscc42613.2021.9365830

Cited by 23 publications

(5 citation statements)

References 6 publications

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“…Table I summarizes the performance of the proposed TX and compares it with the state-of-the-art mm-wave digital and analog transmitters and PAs. Analog PAs/TXs without efficiency enhancement technique [58], [59] are also added to demonstrate the energy efficiency benefits of the proposed Doherty network. This work demonstrates the highest Doherty order (4-way) with an outstanding drain and system efficiency at 11.5 dB PBO.…”

Section: Resultsmentioning

confidence: 99%

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A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies

Mortazavi

Shen

Mul

et al. 2022

IEEE J. Solid-State Circuits

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This paper presents an efficient digital polar transmitter (DPTX) at mm-wave frequencies that exploits a novel N-way series Doherty combiner (SDC) to enhance its drain and system efficiency at deep power back-off (PBO). The proposed N-way SDC is scalable and can be implemented elegantly using N transformers and N-1 shunt capacitors. As a proof of concept, a 4-way Doherty DPTX is realized with the proposed SDC in which four identical but independent digital phase modulators deliver a phase-modulated constant envelope signal to their corresponding digital power amplifiers to perform the required amplitude modulation. Fabricated in a 40-nm CMOS process, the proposed DPTX occupies a core area of 1.1 mm 2 and exhibits 18.7 dBm saturated output power and <-40 dBc LO feedthrough. It demonstrates a drain efficiency of 33%/36%/22% at 0/4.5/11.5 dB PBO at 29.5 GHz carrier frequency. While transmitting a 300 MHz 64-QAM OFDM signal with a peakto-average power ratio of -10.7 dB, the DPTX achieves 18%/8% average drain/system efficiency, -27.6 dB error vector magnitude, and -27.5 dBc adjacent channel leakage ratio. To the best of the authors' knowledge, this work is the first reported mm-wave Doherty transmitter that includes the entire chain all the way from the binary data stream up to the modulated mm-wave output signal.Index Terms-Series Doherty combiner, Digital polar transmitter, Doherty design guide, Digital power amplifier (DPA), Digital phase modulator (DPM), millimeter-wave transmitter, power amplifier (PA).

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Section: Resultsmentioning

confidence: 99%

“…This work Thakkar, JSSC'19 [40] Qian, JSSC'20 [36] Nguyen, RFIC'20 [37] Wang, JSSC'19 [26] Nguyen, JSSC'20 [27] Nguyen, ISSCC'19 [21] Pashaeifar, ISSCC'21 [29] Li, JSSC'21 [14] Rabet, JSSC'20 [10] Garay, ISSCC'21 [58] Zhu, CICC'21 […”

Section: Parametermentioning

confidence: 99%

A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies

Mortazavi

Shen

Mul

et al. 2022

IEEE J. Solid-State Circuits

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“…CMOS PAs seem to achieve good PAE performance, with the bulk of amplifiers plotted in Figure 3 reaching between 40 and 50%. Garay et al report PAE of 50% for a 45 nm CMOS-SOI PA, which also targets 5G NR systems [49]. Their architecture utilizes a dual-drive scheme, where the gate and source terminals are driven concurrently.…”

Section: A Power Amplifiers In the 20-50 Ghz Regionmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change. Standards that define the operation of next-generation mobile networks are moving away from the traditional radio frequency (RF) spectrum and into millimeter-wave (mm-wave) bands. The physical layer (PHY) for IEEE 802.11ad Wi-Fi and 802.11ay WLANs dictates operation in the unlicensed 60 GHz band. 5G New Radio (NR) applications utilize selected bands from 26 to 39 GHz. Additionally, newly developing Fourth Industrial Revolution (4IR) applications depend on 5G NR as an enabling technology. Satellite communications and wireless backhaul will occur in E-band between 70-86 GHz. Increasing demands from the market cause designers to push boundaries, and the development of standards guide technological advances. Perhaps the most substantial improvements are observed in integrated circuit technology. This article details the major Si processes, namely Complementary Metal Oxide Semiconductor (CMOS) and SiGe Bipolar CMOS (BiCMOS), and their foray into the wireless transceiver space traditionally dominated by GaAs. CMOS and BiCMOS have become popular in many communities because of their low fabrication cost and excellent digital integration capabilities. RF performance has matured to where Si is a serious competitor for tried-and-tested III-V technologies. Some extreme environments and sophisticated applications still favor GaAs and GaN, however. GaAs, for example, can yield unparalleled output power and excellent noise figure performance, albeit at a higher cost and increased design and manufacturing complexity due to the multi-chip nature of these circuits.INDEX TERMS 5G new radio (NR), broadband communication, cellular vehicle-to-everything (C-V2X), CMOS, fourth industrial revolution (4IR), Internet of Things (IoT), millimeter-wave, SiGe BiCMOS.

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“…Demands for elevated data rates and expanded capacity mandate the incorporation of intricate signal modulation techniques in fifth-generation (5G) communication systems, including high-order quadrature amplitude modulation (QAM), massive multiple-input multiple-output (MIMO), and orthogonal frequency-division multiplexing (OFDM) [1,2]. However, these techniques pose challenges, such as a high peak-to-average power ratio (PAPR) of up to 9-12 dB, coupled with the necessity for a high degree of linearity in communication systems [3][4][5]. Consequently, power amplifiers (PAs) must operate at deep output power back-off (OBO), resulting in a diminished average efficiency [6].…”

Section: Introductionmentioning

confidence: 99%

A Broadband Three-Way Series Doherty Power Amplifier with Deep Power Back-Off Efficiency Enhancement for 5G Application

Que,

Li,

Wang

2024

Electronics

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This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through a transformer, which requires only a low coupling factor, thus facilitating its implementation in double-sided PCBs or monolithic microwave integrated circuit (MMIC) processes. The design equations for the proposed DPA topology are proposed and analyzed in detail. A proof-of-concept PA at the 2.1–2.8 GHz band using commercial GaN transistors was designed and fabricated to validate the proposed concept. Within the operating frequency band, it achieves a saturated output power (Psat) of 44.5–46.5 dBm with a peak drain efficiency (DE) of 60–72%, and 43–52% DE at 10 dB OBO. Moreover, under a 20 MHz long-term evolution (LTE)-modulated signal, the PA demonstrates a 36.8–37.5 dBm average output power (Pavg) and 47–53% average drain efficiency (DEavg). Notably, the adjacent channel leakage ratio (ACLR) is as low as −35–−28.2 dBc without any digital predistortion (DPD).

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26.3 A mm-Wave Power Amplifier for 5G Communication Using a Dual-Drive Topology Exhibiting a Maximum PAE of 50% and Maximum DE of 60% at 30GHz

Cited by 23 publications

References 6 publications

A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies

A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

A Broadband Three-Way Series Doherty Power Amplifier with Deep Power Back-Off Efficiency Enhancement for 5G Application

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