Polycrystalline Graphene with Single Crystalline Electronic Structure

Brown, Lola; Lochocki, Edward; Ávila, J.; Kim, Cheol‐Joo; Ogawa, Yui; Havener, Robin W.; Kim, Yon Su; Monkman, Eric; Shai, Daniel; Wei, Haofei I.; Levendorf, Mark; Asensio, M. C.; Shen, Kyle; Park, Jiwoong

doi:10.1021/nl502445j

Cited by 132 publications

(152 citation statements)

References 40 publications

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“…[17][18][19][29][30][31][32] Large hexagonal domains of graphene was also found to show the uniform orientation with their zigzag edges parallel to the [1 -10] Cu direction. 23 We note that it is surprising that the graphene lattice follows the Cu(111) lattice even on the thermally activated Cu surface which is accompanied with the step-terrace formation and Cu evaporation.…”

Section: ■ Introductionmentioning

confidence: 95%

Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

Ohta²,

et al. 2015

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The growth of single-layer graphene on Cu metal by chemical vapor deposition (CVD) is a versatile method to synthesize high-quality, large-area graphene. It is known that high CVD temperatures, close to the Cu melting temperature (1083 ºC), are effective for the growth of large graphene domains, but the growth dynamics of graphene over the high-temperature Cu surface is not clearly understood. Here, we investigated the surface dynamics of the single-layer graphene growth by using heteroepitaxial Cu(111) and Cu(100) films. At relatively lower temperatures, 900~1030 ºC, the as-grown graphene showed the identical orientation with the underlying Cu(111) lattice. However, when the graphene was grown above 1040 ºC a new stable configuration of graphene with 3.4º-rotation became dominant. This slight rotation is interpreted by the enhanced graphene-Cu interaction due to the formation of long-range ordered structure. Further increase of the CVD temperature gave the graphene which is rotated with a wide angle distributions, suggesting the enhanced thermal fluctuation of the Cu lattice. The band structures of CVD graphene grown at different temperatures are well correlated with the observed structural change of the graphene. The strong impact of high CVD temperature on a Cu catalyst was further confirmed by the structural conversion of a Cu(100) film to Cu(111) which occurred during the high temperature CVD process. Our work presents important insight on the growth dynamics of CVD graphene, which can be developed to high quality graphene for future high-performance electronic and photonic devices.

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Section: ■ Introductionmentioning

confidence: 95%

Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

Ohta²,

et al. 2015

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“…The growth of h-BN in our experiments appears to be initiated from dense, multiple points on the Ni(111) surface, which already cover a large percentage of the whole area of the surface even after a duration of 30 s. This is in contrast to previous chemical vapor deposition works where individual grains with a low density grew larger and then covered the entire film. 15,16,21 As the growth time increases, each h-BN nucleus merged into several multilayered h-BN patches, and then films with complete coverage were finally formed (see Supplementary Figures S3a,b and Supplementary Information). Nevertheless, in our case, a strong epitaxial relationship between the h-BN film and the Ni(111) surface presumably led to the formation of a single-oriented h-BN film.…”

Section: Effect Of Growth Parametersmentioning

confidence: 99%

“…[17][18][19][20] Accordingly, large-area single crystalline h-BN layers are desired to fully realize the potential advantages of h-BN in device applications. To this end, efforts on controlling the size and direction of individual domains of h-BN have been reported; 15,16,21,22 however, obtaining large-scale single crystalline h-BN films remains challenging. Here, we report the synthesis of epitaxial h-BN films on the centimeter scale while maintaining a low cost of production by re-using the Ni(111) substrates via electrochemical delamination.…”

Section: Introductionmentioning

confidence: 99%

Centimeter-sized epitaxial h-BN films

Tchoe

et al. 2016

NPG Asia Mater

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We report the growth and transfer of centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films using Ni(111) single-crystal substrates. The h-BN films were heteroepitaxially grown on 10 × 10 mm 2 or 20 × 20 mm 2 Ni(111) substrates using atmospheric pressure chemical vapor deposition with a single ammonia-borane precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-used. A careful analysis of the growth parameters revealed that the crystallinity and area coverage of the h-BN films were mostly sensitive to the sublimation temperature of the ammonia-borane source. Moreover, various physical characterizations confirmed that the grown films exhibited the typical characteristics of hexagonal boron nitride layers over the entire area. Furthermore, the heteroepitaxial relationship between h-BN and Ni(111) and the overall crystallinity of the film were thoroughly investigated using a synchrotron radiation X-ray diffraction analysis including θ-2θ scans, grazing incident diffraction, and reciprocal space mapping. The crystallinity at the microscopic scale was further investigated using transmission electron microscopy (TEM)-based techniques, including selective area electron diffraction pattern mapping, electron back-scattered diffraction, and high-resolution TEM.

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“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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Polycrystalline Graphene with Single Crystalline Electronic Structure

Cited by 132 publications

References 40 publications

Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

Centimeter-sized epitaxial h-BN films

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

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