2011
DOI: 10.1109/jlt.2011.2163814
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25-Gb/s Multichannel 1.3-$\mu$m Surface-Emitting Lens-Integrated DFB Laser Arrays

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Cited by 41 publications
(13 citation statements)
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“…These values of the threshold current are the lowest values among those of high-speed edge-emitting lasers operating above 20 Gb/s so far reported, to our knowledge. The measured series resistance was 10 , which is comparable to that of the 25 and 28-Gb/s lasers [9]- [12].…”
Section: Device Structuresupporting
confidence: 59%
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“…These values of the threshold current are the lowest values among those of high-speed edge-emitting lasers operating above 20 Gb/s so far reported, to our knowledge. The measured series resistance was 10 , which is comparable to that of the 25 and 28-Gb/s lasers [9]- [12].…”
Section: Device Structuresupporting
confidence: 59%
“…The epitaxial layers of the device were grown on an n-InP substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The active layer consists of undoped InGaAlAs MQW and SCHs layers, which are the same as those of 25-Gb/s and 28-Gb/s lasers [9]- [12]. The current blocking layers that consist of a semi-insulated semiconductor are buried adjacently on both the sides of the grating, the MQW with SCHs, and n-InP cladding layers.…”
Section: Device Structurementioning
confidence: 99%
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“…3(d). The rest of the basic device structure was almost the same as a previously reported high-speed design [10]. For achieving high-speed (25.8 Gbps/ch) operation, a short cavity (150-µm length) with high gain AlGaInAs active layer was adopted.…”
Section: Device Design and Fabrication Processmentioning
confidence: 99%
“…A lens-integrated surface-emitting DFB laser (LISEL) was previously developed by the authors for a low-cost optical module [6]. In the LISEL, a 45°mirror and a lens are monolithically integrated to a DFB cavity.…”
Section: Introductionmentioning
confidence: 99%