1990
DOI: 10.1049/el:19900178
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242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity

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Cited by 25 publications
(13 citation statements)
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“…Currently, the main effort is directed towards development of the designs suitable for building optical integrated systems. Nevertheless, the best practical results have been obtained so far with the systems that use bulk mobile gratings in the cavity [26][27][28].…”
Section: External Cavity Lasermentioning
confidence: 99%
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“…Currently, the main effort is directed towards development of the designs suitable for building optical integrated systems. Nevertheless, the best practical results have been obtained so far with the systems that use bulk mobile gratings in the cavity [26][27][28].…”
Section: External Cavity Lasermentioning
confidence: 99%
“…Incorporating pseudomorphic In x Ga 1-x As quantum wells in an Al y Ga 1-y As-GaAs material system has resulted in a structure which allows for an increased band filling and tuning range extending to 130 nm [30] (845.4 nm < l < 975.6 nm). However, broadly tunable QW laser diodes have been mainly focused on materials which contain multiple identical wells (MQW) [33,26] including QWs with strained layers [34]. In addition, gain calculations and experiments have shown that a wider and flatter gain profile than that of a material which consists of say three identical QWs can be obtained when we use non-identical QWs [35] with different QW width or barrier height.…”
Section: Semiconductor Optical Amplifiersmentioning
confidence: 99%
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“…Later on, DFB lasers with an additional phase-tuning section were developed and it was shown that one could obtain reproducible and controllable SPs in such devices 4,5 .…”
Section: Introductionmentioning
confidence: 99%
“…Miniature external cavity lasers with blazed gratings were developed at British Telecom Research Labs in the early 1980s [13], [14]. The gratings were mounted in Littrow and tuned using piezoelectric elements.…”
Section: Introductionmentioning
confidence: 99%