240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

Lahrichi, M.; Glastre, G.; Derouin, E.; Carpentier, D.; Lagay, N.; Décobert, J.; Achouche, M.

doi:10.1109/lpt.2010.2057503

Cited by 30 publications

(19 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 to illustrate the expected trends. To-date the development of high bandwidth APDs has focused on reducing w to as little as 100 nm [16][17][18][19][20][21], while k has typically remained ≥ 0.2. The gain-bandwidth products reported for such devices and other state-of-the-art high bandwidth APDs, are shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

et al. 2011

View full text Add to dashboard Cite

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.

show abstract

Section: Introductionmentioning

confidence: 99%

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

et al. 2011

View full text Add to dashboard Cite

show abstract

“…Its dark current at room temperature is 6nA at 0.9Vb. This is lower than 9nA (with an active region of 35µm in diameter) and 23nA (with an active region of 30µm in diameter) of the planar structures [6], [11] reported, for the 3-mesa structure has a much smaller surface area which helps to reduce surface leakage current. Fig.…”

Section: Resultsmentioning

confidence: 73%

“…Moreover, the temperature dependence of the ionization process in InAlAs is much smaller than that of InP [5]. High performance APDs utilizing InAlAs as the multiplication material have been reported [6]- [8].…”

Section: Introductionmentioning

confidence: 99%

A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode

Chen

et al. 2015

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

A top-illuminated three-mesa-type InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiode with a mesa larger than P contact mesa to reduce surface electric field, which achieves simultaneously the low dark current of planar type device and fabrication-simplicity and reproducibility of the mesa type one, is demonstrated. A high responsivity of 0.77 A/W (M = 1, without AR) at 1.55 µm and high multiplication gain of more than 100 is achieved, whereas the dark current at 0.9 Vb is as low as 6 nA at room temperature (with 55-µm active region diameter). The dark current of devices of this structure is analyzed and proved to be mainly composed of surface leakage current and is significantly reduced compared with typical mesa structure devices with the same active region size while the capacitance is similar to that of typical mesa structure devices.Index Terms-Avalanche photodiode (APD), mesa, low dark current.

show abstract

“…Simple-structured p-i-n PDs are the most common components in many optical systems. Yet, in order to improve on existing features of the conventional p-i-n PDs, different design variations, such as, those found in dual-depletion-region photodiodes (DDR PDs) [1,2], uni-traveling-carrier photodiodes (UTC-PDs) [3][4][5] and avalanche photodiodes (APDs) [6][7][8][9], were extensively studied. Utilizing optical absorption layers combined with drift layers having wide bandgap, the DDR PDs typically have a larger bandwidth-efficiency product than that of conventional p-i-n PDs.…”

Section: Vertically-illuminated Photodetectors (Vpds)mentioning

confidence: 99%

Overcoming the Bandwidth-Quantum Efficiency Trade-Off in Conventional Photodetectors

Zhou¹,

Chee²

2019

Photodetectors [Working Title]

View full text Add to dashboard Cite

Optical systems and microwave photonics applications rely heavily on high-performance photodetectors having a high bandwidth-efficiency product. The main types of photodetector structures include Schottky and PIN-photodiodes, heterojunction phototransistors, avalanche photodetectors, and metal-semiconductor-metal photodetectors. Verticallyilluminated photodetectors intrinsically present bandwidth-efficiency limitations, but these have been mitigated by new innovations over the years in quantum well photodetectors, edge-coupled photodetectors and resonant-cavity enhanced photodetectors for improved photophysical characteristics. Edge-coupled ultra-high-speed photodetectors have yielded high conversion efficiencies, and the active device structure of resonantcavity-enhanced photodetectors allows wavelength selectivity and optical field enhancement due to resonance, enabling photodetectors to be made thinner and hence faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Single-photon avalanche diodes have been developed, which combine an ultimate sensitivity with excellent timing accuracy. Further advances in addressing the bandwidthquantum efficiency trade-off have incorporated photon-trapping nanostructures and plasmonic nanoparticles. Nanowire photodetectors have also demonstrated the highest photophysical performance to date.

show abstract

240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

Cited by 30 publications

References 12 publications

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode

Overcoming the Bandwidth-Quantum Efficiency Trade-Off in Conventional Photodetectors

Contact Info

Product

Resources

About