A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode

Abstract

A top-illuminated three-mesa-type InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiode with a mesa larger than P contact mesa to reduce surface electric field, which achieves simultaneously the low dark current of planar type device and fabrication-simplicity and reproducibility of the mesa type one, is demonstrated. A high responsivity of 0.77 A/W (M = 1, without AR) at 1.55 µm and high multiplication gain of more than 100 is achieved, whereas the dark current at 0.9 Vb is as low as 6 nA at room temperature (with 55-µm active region diameter). The dark current of devices of this structure is analyzed and proved to be mainly composed of surface leakage current and is significantly reduced compared with typical mesa structure devices with the same active region size while the capacitance is similar to that of typical mesa structure devices.Index Terms-Avalanche photodiode (APD), mesa, low dark current.

Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy

“…and when (F − 1) E ε and FW H M EN are negligible, the spectral resolution is said to be Fano limited. From figure 3, it can be observed that the leakage current of the detector is in the region of 40 pA before breakdown and this is smaller than other research III-V devices presented in literature [16][17][18][19]. Thus the contribution of the leakage current of the detector to the term FW H M EN is expected to be small.…”

Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

“…Thus, we can use Formula 8 to find optimal calculated doping level and thicknesses of charge layer. When the multiplication layer is 200 nm (the avalanche field E in the multiplication is 6.7 × 10 5 V/cm while the multiplication layer is 200 nm [ 27 ]); the calculated values of doping level and thickness in the charge layer are compared with results from [ 28 – 33 ] in Fig. 2 .…”

High-Performance Normal-Incidence Ge/Si Meta-Structure Avalanche Photodetector

“…Figure 5 shows the effect of the size of the device on the 3 dB bandwidth under different gain. A three-mesa structure is designed to decrease the electric field on the edge of the multiplication layer [28], as shown as Figure 5a. Assuming that the device's top mesa is x microns in diameter, the second mesa is x + 4 microns, and the third one is x + 16 microns.…”