2013
DOI: 10.1002/adma.201300456
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Light‐Emitting Field‐Effect Transistors Having Combined Organic Semiconductor and Metal Oxide Layers

Abstract: A new organic light-emitting field-effect transistor characterized by a metal oxide layer inserted between the organic layer and the gate insulator is proposed. The metal oxide is indirectly connected with source and drain electrodes through the organic layer. Upon increasing the potential difference between the source and drain electrodes, the emission becomes exceedingly strong and the emission region encompasses the whole channel zone.

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Cited by 31 publications
(57 citation statements)
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“…proposed a novel OLET architecture where an aluminum‐doped zinc oxide (AZO) layer was inserted between the crystal and the gate insulator. This metal oxide layer can offer an abundance of electrons, which assists the device with a large current density and an intense emission . Molecular doping technology is also exploited to improve EL performance.…”
Section: Light‐emitting Devices Of Oscssmentioning
confidence: 99%
“…proposed a novel OLET architecture where an aluminum‐doped zinc oxide (AZO) layer was inserted between the crystal and the gate insulator. This metal oxide layer can offer an abundance of electrons, which assists the device with a large current density and an intense emission . Molecular doping technology is also exploited to improve EL performance.…”
Section: Light‐emitting Devices Of Oscssmentioning
confidence: 99%
“…Accordingly, TPCOs have been acknowledged as one of the promising candidates for high‐performance electronic devices . On the other hand, TPCOs could also display good photonic characteristics . These issues endow them with great opportunities as active layers in OLETs.…”
Section: State‐of‐the‐art Strategies For High Performance Oletsmentioning
confidence: 99%
“…It can be seen from the above sections that TPCOs can offer both high luminescence and charge transport capabilities so that they can work as a promising active material for OLETs . In order to further enhance these properties, Oniwa et al synthesized two new furan‐based biphenyl end‐capped oligomers, BPFT and BP2F, by partial or full replacement of sulfur to oxygen in BP2T .…”
Section: State‐of‐the‐art Strategies For High Performance Oletsmentioning
confidence: 99%
“…This often brings about large device operation voltages and weak emission intensities in an optical device, especially that using a single crystal. To overcome such a drawback Yamada et al [8] improved a device constitution where an inorganic layer (aluminumdoped zinc oxide: AZO, in Fig. 2) is inserted between the organic semiconductor layer and gate insulator (Fig.…”
Section: Device Constitutionsmentioning
confidence: 99%
“…Abundance of negative charge carriers (i.e. electrons) produces strong emissions of the resulting device [8].…”
Section: Device Constitutionsmentioning
confidence: 99%