23-GHz Band GaAs MESFET Reflection-Type Amplifier

Tohyama, H.; Mizuno, Hideyuki

doi:10.1109/tmtt.1979.1129641

IEEE Trans. Microwave Theory Techn.

1979

DOI: 10.1109/tmtt.1979.1129641

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23-GHz Band GaAs MESFET Reflection-Type Amplifier

H. Tohyama

Hideyuki Mizuno

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Cited by 17 publications

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“…(8) indicate the effect of noise suppression as a function of gain and reflection coefficient from the circulator port. This claim is confirmed as well by experimental results for noise figure presented in Figure 8 in [2] and in Figure 10 in [4], by subtracting the circulator and matching network losses (0.3 dB). Therefore, we do not agree with the conclusion given in [6,7], that the noise of the two-port LNA and a reflection amplifier (such as OPTA) are the same.…”

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confidence: 79%

“…Paul [1] mention that apart from the "approximate noise analysis and the specific design example at a low microwave frequency" [2] had been reported previously. We completely disagree with this point because this "approximate noise analysis" agrees with experimental results.…”

mentioning

confidence: 99%

“…The concept of using a GaAs MESFET in a reflection mode amplifier to achieve high gain at high frequency was reported as long ago as 1979 [2], and a power amplifier using the same idea was described in the same year [3]. A design method for lownoise, negative-resistance, reflection-mode, transistor amplifiers, along with a practical example operating in X-band, was described in 1991 [4].…”

mentioning

confidence: 99%

“…The authors of [1] failed to acknowledge the earlier work in [2][3][4][5][6][7], and the referees failed to notice this omission. [1] argue that the authors of [2] have failed to acknowledge significant earlier work in the same field. Regarding this, we appreciate the authors of [1] for providing a list of references related to this field.…”

mentioning

confidence: 99%

“…Using this concept, we have proposed Eq. (8) [2] to calculate the noise figure of these kind of amplifiers, in which the second and third terms of Eq. (8) indicate the effect of noise suppression as a function of gain and reflection coefficient from the circulator port.…”

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confidence: 99%

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Comments on “low‐noise one‐port microwave transistor amplifier”

Gardner¹,

Paul²

2002

Micro & Optical Tech Letters

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inductive as the width ratio is increasing. The reason for this behaviour may be due to the change in nature of disturbed electromagnetic fields by the discontinuity from electric to magnetic with increasing width ratio. CONCLUSIONThe full-wave CAD model for generalised offset and gap discontinuity for asymmetric strips in multi-layered medium is presented in this paper. The results for specific cases are compared with available data for the purpose of validation of the present theory. This model is suitable for computer-aided design and optimisation of microwave circuits, such as inter-digital filters with advanced filtering characteristics, which require complex cross-couplings between printed elements.

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confidence: 79%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Comments on “low‐noise one‐port microwave transistor amplifier”

Gardner¹,

Paul²

2002

Micro & Optical Tech Letters

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Response to comments on “low‐noise one‐port microwave transistor amplifier”

Venguer¹,

Medina²,

Chavez³

et al. 2002

Micro & Optical Tech Letters

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Negative‐resistance, reflection‐type bipolar frequency doubler

Lau

Xue

Chan

et al. 2006

Micro & Optical Tech Letters

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is obtained for minimum thickness while least agility 36.76% (0.918 GHz) is achieved for highest insulator thickness (500 Å). It is also observed from Figures 5 and six that the variation in resonance frequency with bias voltage is faster near zero bias voltage that becomes steady towards higher values of bias voltage. This is because of the fact that change in frequency is solely governed by the MOS capacitance [Eq. (4)]. It is evidently clear that the proposed frequency agile active microstrip antenna can be operated with varying tuning capabilities at microwave range by controlling the bias voltage of the device integrated with the patch.The theoretical and simulation results for return loss of proposed frequency agile active microstrip antenna as a function bias voltages are shown in Figure 7. It is observed that the return loss remains well below the Ϫ10 dB range (varies from Ϫ19.85 to Ϫ14.3 dB). The radiation pattern of the antenna is shown in Figure 8. That is invariant with the bias voltage of MOS capacitor. CONCLUSIONA new technique to enhance the frequency agility has been proposed. The frequency agile active microstrip antenna can be operated with varying tuning capabilities at microwave range by controlling the bias voltage of MOS capacitor integrated with patch. It found the frequency agility (1.527 GHz) for proposed antenna is the maximum for the minimum thickness of insulator layer of typical MIS diode structure (Au-Si 3 N 4 -Si). INTRODUCTIONThree-terminal transistor can work in a reflection mode instead of the common transmission configuration, to present high reflection gain and low noise features in reflection-type amplifiers [1-4], or provide negative resistance for loss compensation in active filters [5, 6]. Such circuits should properly choose the feedback and terminating impedance on one port to give negative-resistance and optimum noise measured at the other port. When this topology is much adopted in active filters and one-port reflection-type amplifier [4], it is not suitable for two-port reflection-type amplifiers [1][2][3], because of the necessary presence of the bulky circulator for input and output ports (I/O) fundamental frequency isolation.On the other hand, a frequency doubler has inherent I/O frequency separation and it is easy to adopt this topology. Desirably, the circulator can be replaced by filters or ring resonator. The reconfigured structure utilizes feedback to introduce negativeresistance at second harmonic to ensure the circuit has more than unity conversion gain. To prove the design methodology, two frequency doublers with filters or ring resonator are designed at S-band and both have more than 3 dB conversion gain. DESIGN PROCEDURE AND THEORYFigures 1 and 2 show the two new frequency doubler circuits, one with filters and the other incorporating a ring resonator. Both circuits can be divided into two parts, which are designed sepa- rately, the I/O network and the one-port reflection-type doubler, which is depicted in Figure 3. There are two steps in the design pro...

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23-GHz Band GaAs MESFET Reflection-Type Amplifier

Cited by 17 publications

References 3 publications

Comments on “low‐noise one‐port microwave transistor amplifier”

Comments on “low‐noise one‐port microwave transistor amplifier”

Response to comments on “low‐noise one‐port microwave transistor amplifier”

Negative‐resistance, reflection‐type bipolar frequency doubler

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