Comments on “low‐noise one‐port microwave transistor amplifier”

Abstract

inductive as the width ratio is increasing. The reason for this behaviour may be due to the change in nature of disturbed electromagnetic fields by the discontinuity from electric to magnetic with increasing width ratio. CONCLUSIONThe full-wave CAD model for generalised offset and gap discontinuity for asymmetric strips in multi-layered medium is presented in this paper. The results for specific cases are compared with available data for the purpose of validation of the present theory. This model is suitable for computer-aided design and optimisation of microwave circuits, such as inter-digital filters with advanced filtering characteristics, which require complex cross-couplings between printed elements.

Response to comments on “low‐noise one‐port microwave transistor amplifier”

“…Gardner and D.K. Paul [1] argue that the authors of [2] have failed to acknowledge significant earlier work in the same field. Regarding this, we appreciate the authors of [1] for providing a list of references related to this field.…”

“…Paul [1] mention that apart from the "approximate noise analysis and the specific design example at a low microwave frequency" [2] had been reported previously. We completely disagree with this point because this "approximate noise analysis" agrees with experimental results.…”

“…Paul [1] argue that the authors of [2] have failed to acknowledge significant earlier work in the same field. Regarding this, we appreciate the authors of [1] for providing a list of references related to this field. We admit that some of the references were unknown to us before sending the manuscript, but it is worthwhile to mention that others [3] have been cited by us in a recent work [4].…”

“…In order to have an Ids ϭ 3 ma for V ds ϭ 0.1 v, the V gs ϭ Ϫ0.5 volts. This bias point is different from the amplifiers given in [4 -7] of [1], which use the recommended bias point for low-noise operation of a conventional two-port low-noise amplifier (V ds ϭ 2 or 3 volts, with I ds ϭ 10 mA). In addition, they use the S parameters given by the manufacturer.…”