2013
DOI: 10.1364/oe.21.029000
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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Abstract: Here we report for the first time a passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots(QDs) grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 µm. Self-starting pulses with repetition rates around 23 and 39 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation. A RF spectral width as low as 20 kHz has been obtained lea… Show more

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Cited by 11 publications
(3 citation statements)
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“…In addition, achievement of repetition rates as low as 10 GHz and as high as 100 GHz from 2.5×430 µ m 2 and 2.5×4300 µm 2 Qdot modelocked lasers, respectively, highlights the achievements of InAs/InP Qdot active media in mode locking. Very recently, apart from the leading (100)InP based Qdot mode-locked lasers, selfpulsation in InAs/InGaAsP Qdots lasers on (311)B InP substrate was also reported by Klaime et al [106] with repetition rates around 23 and 39 GHz and pulse width down to 1.5 ps. The 2×1000 µm 2 and 2×2000 µm 2 ridge-waveguide devices exhibited extremely low RF spectral width of 20 kHz indicating very low timing jitter.…”
Section: Self-pulsationmentioning
confidence: 87%
See 1 more Smart Citation
“…In addition, achievement of repetition rates as low as 10 GHz and as high as 100 GHz from 2.5×430 µ m 2 and 2.5×4300 µm 2 Qdot modelocked lasers, respectively, highlights the achievements of InAs/InP Qdot active media in mode locking. Very recently, apart from the leading (100)InP based Qdot mode-locked lasers, selfpulsation in InAs/InGaAsP Qdots lasers on (311)B InP substrate was also reported by Klaime et al [106] with repetition rates around 23 and 39 GHz and pulse width down to 1.5 ps. The 2×1000 µm 2 and 2×2000 µm 2 ridge-waveguide devices exhibited extremely low RF spectral width of 20 kHz indicating very low timing jitter.…”
Section: Self-pulsationmentioning
confidence: 87%
“…The GS and ES lasing were observed at 1.54 µm and 1.5 µm, respectively. The significant improvement in the growth of the material quality was substantiated by: (i) lasing wavelength at 1.52 µm, originated from a single Qdot active layer on (311)B InP substrate under pulsed current injection [66], (ii) highest reported modal gain of 13 cm -1 from a single stack InAs/InP Qdot laser [7,66], (iii) the largest dot density of 1.3×10 from Qdot lasers on (311)B InP [106]. However, the temperature stability of the InAs/InGaAsP Qdots lasers were comparatively poor compared to their InAs/InGaAlAs Qdots laser counterparts, due to the low conduction band offset arising from the mere 25-50 K characteristics temperature T 0 [101].…”
Section: Inas/inp Qdots Lasersmentioning
confidence: 99%
“…Reports on modelocking observed in QDash single-section lasers show both ex facet sub picosecond 10 and ps range pulse emission after compression with low timing jitter. 11,12 In Ref. 13 chemical beam epitaxy grown single-section QD laser demonstrates ex facet 295 fs pulses at 50 GHz.…”
mentioning
confidence: 99%