2023 IEEE International Solid- State Circuits Conference (ISSCC) 2023
DOI: 10.1109/isscc42615.2023.10067457
|View full text |Cite
|
Sign up to set email alerts
|

23.7 A BJT-Based Temperature Sensor with $\pm 0.1^{\circ}\mathrm{C}(3\sigma)$ Inaccuracy from -55°C to 125°C and a 0.85pJ.K2 Resolution FoM Using Continuous-Time Readout

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
3
1
1

Relationship

0
5

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 6 publications
0
1
0
Order By: Relevance
“…2) It should feature a relatively high area efficiency; considering that a standard 180-nm CMOS process and a BJT-based approach were adopted for the proposed design as will be recalled in the following of this article, the area target was set to 0.1 mm 2 according to the compactness level of the state-of-the-art temperature sensors designed in such a mature technology node like [21] or [22].…”
Section: Introductionmentioning
confidence: 99%
“…2) It should feature a relatively high area efficiency; considering that a standard 180-nm CMOS process and a BJT-based approach were adopted for the proposed design as will be recalled in the following of this article, the area target was set to 0.1 mm 2 according to the compactness level of the state-of-the-art temperature sensors designed in such a mature technology node like [21] or [22].…”
Section: Introductionmentioning
confidence: 99%