220 - 250-GHz Phased-Array Circuits in 0.13-/spl mu/m SiGe BiCMOS Technology

Elkhouly, Mohamed; Glisic, Srdjan; Meliani, C.; Ellinger, Frank; Scheytt, J. Christoph

doi:10.1109/tmtt.2013.2258032

Cited by 51 publications

(23 citation statements)

References 17 publications

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“…The authors in [3] report a reduction of f max from 480 GHz to 200 GHz when all the interconnect parasitics are incorporated from the device level to the top-metal level, which is typically used for the implementation of RF circuits and passive elements. Similarly, a reduction of f max in the range of 20% has been reported for high performance SiGe HBTs in 90 nm (from 310 GHz to 250 GHz) and 130 nm nodes (from 480 GHz to 380 GHz) when the top-level interconnects are included [4], [5]. Clearly, this is a major limitation to the maximum RF circuit performance that can be achieved with these high-speed devices.…”

Section: Introductionmentioning

confidence: 88%

An investigation of f<inf>T</inf> and f<inf>max</inf> degradation due to device interconnects in 0.5 THz SiGe HBT technology

Ulusoy

Schmid

Zeinolabedinzadeh

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonlyaccepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in stateof-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an fmax of 450 GHz at the device level and at the topmetal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest fmax reported at the top-metal level in any state-of-the-art silicon technology.

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Section: Introductionmentioning

confidence: 88%

An investigation of f<inf>T</inf> and f<inf>max</inf> degradation due to device interconnects in 0.5 THz SiGe HBT technology

Ulusoy

Schmid

Zeinolabedinzadeh

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…For example, the high-bandwidth IF interfaces require additional measures to channelize the baseband data streams at the TX and RX sides [171]. Efforts to realize complex communication phased arrays, similar to current W -and D-band solutions, that allow flexible electronic beam steering without focusing elements in this THz frequency range are under way, but so far have been limited to the demonstration of individual building blocks [173].…”

Section: Toward Thz Communication Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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“…A variety of VMs [10–17] have been designed to meet specific applications, and these works were mainly concerned with the design and the realisation of the VM monolithic microwave integrated circuit. Several VM modules [18–22] for phase and amplitude control systems have been implemented by using commercially available packaged VM chips, which have the advantages of reducing the fabrication complexity and cost.…”

Section: Introductionmentioning

confidence: 99%