22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool

Naulleau, Patrick; Anderson, Christopher N.; Chiu, Jerrin; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Goldstein, Michael; Hoef, Brian; Hudyma, Russell M.; Jones, Gideon; Koh, Chawon; Fontaine, Bruno La; Ma, Anna; Montgomery, Warren; Niakoula, Dimitra; Park, Joo-On; Wallow, Tom; Wurm, Stefan

doi:10.1016/j.mee.2009.03.013

Cited by 32 publications

(23 citation statements)

References 13 publications

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“…--------Toexpenmentally determine the importance of mask effects in recent advanced resist testing with the SEMATECH Berkeley microfield exposure tool [6], we implement the correlation 4 measurement described above. To accentuate the mask phase roughness effects presented in Section 1, we use a small sigma (0.05) off-axis illumination setting with an offset of 0.65.…”

Section: Resultsmentioning

confidence: 99%

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Naulleau

2009

Appl. Opt.

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As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern.Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV rnicrofield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.

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Section: Resultsmentioning

confidence: 99%

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Naulleau

2009

Appl. Opt.

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“…[1][2][3][4][5] Towards this end, we have studied resist chemistry using the PeakForce TM Tapping [6] AFM technique. Using advanced high-resolution metrology scanning probe metrology, including PeakForce in combination with observations of patterning quality, we study negative tone resists as a function of cross-linker additives in a Noria based system.…”

Section: Introductionmentioning

confidence: 99%

Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives

Kulshreshtha

Maruyama²,

Dhuey

et al. 2015

Advances in Patterning Materials and Processes XXXII

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One of the key challenges to high resolution resist patterning is probing the resist properties at length scales commensurate with the pattern size. Using a new scanning probe microscopy (SPM), Peak Force™ tapping, we map exposure dependent nanoscale modulus of the exposed/ developed resist patterns with sub-10 nm resolution. By innovative electron beam exposure pattern design, the SPM technique reveals that resist modulus follows the height contrast profile, but with a shift to higher exposure doses. SEM image analysis of patterned resist structures confirm that the best line-space patterns are achieved at exposure dose where modulus reaches its maximum and shows how modulus can be used to probe patternability of resist systems.

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“…[1][2][3] However, EUV lithography uses 13.5 nm wavelength radiation that is easily absorbed by most materials including air; therefore, vacuum conditions are needed. Outgassing of resists upon EUV exposure can adversely impact the vacuum environment [4][5][6] leading to contamination of the reflective optics.…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopy process optimization for characterization of trace contamination elements for extreme ultraviolet resist outgassing study

et al. 2013

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X-ray photoelectron spectroscopy (XPS) is used for elemental identification and quantification in a number of fields, and the optimization of XPS performance can help in making better use of the limited XPS tool availability. In the field of extreme ultraviolet (EUV) lithography, one of the requirements is having a clean vacuum environment to minimize contamination of the EUV optics. EUV resist outgassing is viewed as one of the main issues that could affect the vacuum environment. There is a program underway to measure the relative contamination rates from different resists following the ASML (provider of lithography systems) approved protocols for witness plate testing. One of the key steps is the XPS measurement of residue on the optics after cleaning. The role of XPS in quantification of species that adhere to the ruthenium-coated silicon witness plate sample is discussed. The various XPS tool parameters like the pass energy and source setting were optimized for our application of witness plate analysis. The statistics of our XPS tool were studied, and combined with the fundamental XPS equations, a simple mathematical model was developed to optimize the number of scans for the various elements of interest in our witness plate study. Using the optimized number of scans, the acquisition time to measure the contaminant elements to a precision better than 0.1 at.% was minimized. The model devised in the paper can be adapted to other XPS measurements requiring different levels of precision.

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22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool

Cited by 32 publications

References 13 publications

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives

X-ray photoelectron spectroscopy process optimization for characterization of trace contamination elements for extreme ultraviolet resist outgassing study

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