22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

Lee, K.; Ren, Chao; Yamane, K.; Naik, V. B.; Yang, Han-Chul; Kwon, Jae Hyun; Chung, N. L.; Jang, Seonhee; Behin‐Aein, Behtash; Lim, J. H.; K, S.; Liu, B.; Toh, Eng-Huat; Gan, K. W.; Zeng, D.; Thiyagarajah, Naganivetha; Goh, L. C.; Ling, T.; Ting, J. W.; Hwang, J.; Löw, Robert; Krishnan, R.; Zhang, L.; Tan, S. L.; You, Yuan; Seet, C. S.; Cong, Hongbo; Wong, J.; Woo, S. T.; Quek, Elgin; Siah, S. Y.

doi:10.1109/iedm.2018.8614566

Cited by 37 publications

(13 citation statements)

References 3 publications

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“…As the MTJ size scales down, the energy barrier to switch the FL decreases, which in turn increases its bit-to-bit variation, hence degrading data retention 47 . In principle, intrinsic interfacial PMA (Fig.…”

Section: Interfacial Pma and Synthetic Antiferromagnetsmentioning

confidence: 99%

Two-dimensional materials prospects for non-volatile spintronic memories

Yang

Valenzuela

Chshiev

et al. 2022

Nature

149

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Non-volatile magnetic random access memories such as spin-transfer torque (STT)-MRAM and next generation spin-orbit torque (SOT)-MRAM are emerging as key enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional (2D) van der Waals heterostructures bring ultra-compact multilayer compounds with unprecedented material-engineering capabilities. Here, we first provide an overview of the current developments and challenges in the field, and then outline the opportunities which can arise by implementing 2D materials into spin-based memory technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.

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Section: Interfacial Pma and Synthetic Antiferromagnetsmentioning

confidence: 99%

Two-dimensional materials prospects for non-volatile spintronic memories

Yang

Valenzuela

Chshiev

et al. 2022

Nature

149

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“…This is quite a big challenge in common to many types of eEMs, because intrinsic temperature dependence of data retention performance is large by large activation energy at the cell, and data retention is inseparably linked with cell current (that is, rewrite power and cell scalability) and endurance. R&Ds to realize high data retention capability in reasonable balance with other trade-off factors have been intensively conducted for eFlash replacement [33]- [36]. Regarding eSRAM replacement, key requirements are 1) higher endurance (e.g.…”

Section: Perspective Of Envm Candidates In the Future;mentioning

confidence: 99%

Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age

Kimura

Taito

Hidaka

2020

IEICE Trans. Electron.

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Embedded system approaches to edge computing in IoT implementations are proposed and discussed. Rationales of edge computing and essential core capabilities for IoT data supply innovation are identified. Then, innovative roles and development of MCU and embedded flash memory are illustrated by technology and applications, expanding from CPS to big-data and nomadic/autonomous elements of IoT requirements. Conclusively, a technology roadmap construction specific to IoT is proposed.

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“…For wider and more diverse applications, such as flash-like applications, STT-MRAM will require higher operating temperature and data retention. GlobalFoundries and TSMC announced their progress in flash-like MRAM, and the coercive field is higher than 3000 Oe, which sets a higher requirement for the reliability of the SAF. − The seed layer is crucial for obtaining a SAF with appropriate crystallographic orientation and good texture quality, which will also transfer to the barrier layer and free layer. A single NiCr film, as seed layer, was positively identified for achieving high PMA in a [Co/Ni]-based SAF. − However, in a [Co/Pt]-based SAF and MRAM product, the effect of seed materials is still to be verified and further optimized.…”

Section: Introductionmentioning

confidence: 99%

Current-Induced Magnetization Switching in Seed Optimized Perpendicular Magnetic Tunnel Junctions with Enhanced Spin-Transfer-Torque Efficiency and Uniformity

Sun¹,

Gong²,

Deng³

et al. 2021

ACS Appl. Electron. Mater.

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A NiCr film is introduced in magnetic tunnel junction (MTJ) seed layer to improve the smoothness of multilayer and to enhance the perpendicular magnetic anisotropy (PMA) of the pinning layer. Especially motived by the better uniformity of tunneling magnetoresistance (TMR) and switching current density (J c ), the superiority in endurance and data retention for less tailing bits is demonstrated. Benefiting from the higher spin-transfer-torque (STT) efficiency, higher coercivity and lower J c were achieved at the same time, with satisfying 10 years retention at 85 °C and the endurance cycling lifetime up to at least 10 10 cycles. This work establishes an effective path to improve STT efficiency and uniformity to expedite the commercial application of STTmagnetoresistive random access memory (MRAM).

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22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

Cited by 37 publications

References 3 publications

Two-dimensional materials prospects for non-volatile spintronic memories

Two-dimensional materials prospects for non-volatile spintronic memories

Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age

Current-Induced Magnetization Switching in Seed Optimized Perpendicular Magnetic Tunnel Junctions with Enhanced Spin-Transfer-Torque Efficiency and Uniformity

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