22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Kashyap, Savita; Madan, Jaya; Pandey, Rahul; Ramanujam, Jeyakumar

doi:10.1016/j.optmat.2022.112399

Cited by 12 publications

(5 citation statements)

References 63 publications

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“…In addition, it will also create a sufficient electric field to prevent the movement of holes towards the interface oxide and suppress their recombination with electrons. While the electron selective contact is successfully applied on the front side with SILO-ED contact, the metal-semiconductor interface on the back side remains un-passivated and causes recombination of light-generated charge carriers on the order of 10 7 cm s −1 [18]. Therefore, the impact of the back contact SRV is also investigated for single SILO-ED device to examine the efficiency potential.…”

Section: Single Silo-ed Based Perc Solar Cellmentioning

confidence: 99%

“…However, it provides higher efficiency potential than the Al-BSF device [13][14][15]; contact recombination loss in passivated PERC devices near the metal/silicon interface still exists. When metal is placed directly near the silicon interface, it generates a higher surface recombination velocity (SRV) (∼10 6 cm s −1 ), leading to ∼50% contact recombination losses [16][17][18]. Thus, contact recombination losses have emerged as a limiting factor in PERC devices.…”

Section: Introductionmentioning

confidence: 99%

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25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study

Kashyap

Pandey

Madan

2023

Semicond. Sci. Technol.

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Passivating contacts have recently considered as a superior carrier-selective contact approach for high-efficiency silicon-based photovoltaic (PV) devices. However, the conversion efficiencies of the silicon-based passivated emitter and rear cell (PERC) are limited by contact recombination losses that reduce their performance. Therefore, we investigated a new manufacturable silicide on oxide-based electrostatically doped (SILO-ED) carrier-selective contact to suppress the contact recombination losses and reduce the saturation current density (j0). For the first time, double side electrostatic doping is introduced to the PERC devices to form the carrier selective passivating contacts. First, a conventional PERC device was designed and the effects of surface recombination velocity (SRV) at both contacts were studied. After that, single and double SILO-ED based contacts are introduced into the device and a systematic analysis is performed to understand the tunneling phenomena and improve the conversion efficiency compared to existing PERC cells. The front SILO-ED based device with back contact SRV of 10 cm/s showed a power conversion efficiency (PCE) of 25.4% with j0 (14.3 fA.cm-2). In contrast, the double SILO-ED device delivered 25.7% conversion efficiency by further suppressing the j0 to 11.8 fA.cm-2 by implementing SILO-ED approach with two different metal silicides such as Erbium silicide (ErSi2) and Palladium silicide (Pd2Si) on front and rear contact surface. The champion double SILO-ED PERC solar cell delivered a conversion efficiency of 25.7% with an open circuit voltage (VOC) of 742 mV. The results reported in this study would help to develop superior passivating contact-based PERC solar cells for higher efficiencies.

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Section: Single Silo-ed Based Perc Solar Cellmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study

Kashyap

Pandey

Madan

2023

Semicond. Sci. Technol.

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“…One of the critical challenges in developing lead-free F-PSCs is maintaining their efficiency while achieving the necessary flexibility and mechanical stability. To address these challenges, researchers have explored different strategies using flexible substrates, improved materials engineering, and novel device architectures [29][30][31][32][33][34][35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Simulated bending test analysis of 23% efficient lead-free flexible perovskite solar cell with different bending states

Kashyap,

Pandey,

Madan

2023

Phys. Scr.

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Perovskite solar cells (PSCs) have emerged as a promising technology for developing highly efficient and low-cost photovoltaic (PV) devices. However, toxicity is the primary limiting factor that is restraining the use of traditional PSCs. Therefore, lead-free PSCs have been considered the best alternative due to lead toxicity and environmental impact. The secondary obstacle hindering the potential of PSCs for wearable applications is their limited flexibility. Therefore, lead-free flexible PSC (F-PSC) device is designed and simulated through the Silvaco-TCAD tool in this work. Despite the significant advancements made in F-PSCs, insufficient research is conducted to examine their performance under different bending states to study the reliability of the device’s flexibility. Here, three different bending states have been reported to investigate the proposed device performance, viz. convex, concave, and sinusoidal. The impact of bending radius (BR) in convex and concave from 5 to 20 mm and bending amplitude (BA) in the sinusoidal state from 0.5 to 2 mm is studied and analyzed to optimize the device performance. The performance of the proposed lead-free F-PSC is explored in terms of the current density (JV) curve, PV parameters, and external quantum efficiency (EQE). Optimized PV parameters of the proposed F-PSC are: short-circuit current density (JSC) of 33.45 mA cm−2, open-circuit voltage (VOC) of 0.925 V, fill factor (FF) of 77.15% and PCE of 23.87%. The findings of the reported study would significantly provide a path for the development of F-PSC.

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“…The similar architecture between PERC and Al-BSF allows PERC to be integrated into industrial Al-BSF workflows without much disruption. Many efforts have been made to increase the cell efficiency of PERC (Kashyap et al, 2022a;Kashyap et al, 2022b;Kashyap et al, 2022c;Kashyap et al, 2022d;Kashyap et al, 2022e). Also, PERC cells are able to be made bifacial (Deline et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Field studies of PERC and Al-BSF PV module performance loss using power and I-V timeseries

Curran

Liu

et al. 2023

Front. Energy Res.

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We have studied the degradation of both full-sized modules and minimodules with PERC and Al-BSF cell variations in fields while considering packaging strategies. We demonstrate the implementations of data-driven tools to analyze large numbers of modules and volumes of timeseries data to obtain the performance loss and degradation pathways. This data analysis pipeline enables quantitative comparison and ranking of module variations, as well as mapping and deeper understanding of degradation mechanisms. The best performing module is a half-cell PERC, which shows a performance loss rate (PLR) of −0.27 ± 0.12% per annum (%/a) after initial losses have stabilized. Minimodule studies showed inconsistent performance rankings due to significant power loss contributions via series resistance, however, recombination losses remained stable. Overall, PERC cell variations outperform or are not distinguishable from Al-BSF cell variations.

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22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Cited by 12 publications

References 63 publications

25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study

25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study

Simulated bending test analysis of 23% efficient lead-free flexible perovskite solar cell with different bending states

Field studies of PERC and Al-BSF PV module performance loss using power and I-V timeseries

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