21-W picosecond passively mode-locked external-cavity semiconductor laser

Aschwanden, A.; Lorenser, Dirk; Unold, H.J.; Paschotta, Rüdiger; Gini, E.; Keller, U.

doi:10.1364/ol.30.000272

Cited by 119 publications

(47 citation statements)

References 10 publications

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“…This proposed scheme is quite different from that of the mode-locked laser (MLL) with spatially separate gain media [9], but both offer routes to mode-locked lasers with a flexible repetition rate up to the THz range and a dynamically controlled bandwidth. Such high repetitionrate MLLs are expected to find applications in telecommunications, THz clocking, and THz radiation generation [10].…”

Section: Introductionmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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Optical pulses are generated from a coupled-cavity quantum-dot (QD) laser consisting of a short QD-waveguide Fabry-Perot (F-P) cavity and three long external fiber Bragg grating (FBG) cavities. When the laser is biased at low operation current, the feedback from the external cavities dominates and laser pulses have a 1.01 THz repetition rate, determined by the equal frequency difference of the three FBGs. We are thus able to decouple the repetition rate of a mode-locked laser from the cavity length. With much higher bias current, the QD F-P cavity dominates and the repetition rate is switched to 43.8 GHz, defined by the length of the F-Pcavity.Crown

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Section: Introductionmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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“…The A-FPSA also exhibits negligible group delay dispersion (GDD) with less than 20 fs 2 over the entire high-reflectivity bandwidth (800-1100 nm). Consequently, A-FPSAs have been extensively investigated and developed [3][4][5][6][7][8][9] for application in passively mode-locked solid-state lasers [7,9,10], while the R-FPSAs or near R-FPSAs [10] introduce considerable GDD in the laser cavity and they are incompatible with solid-state laser technology. However, the longer effective interaction length of the optical field in the R-FPSA leads to greater nonlinearity.…”

Section: Introductionmentioning

confidence: 99%

Optical switching in a resonant Fabry–Perot saturable absorber

Tang¹,

Siahmakoun²,

Granieri³

et al. 2006

J. Opt. A: Pure Appl. Opt.

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We experimentally demonstrate optical switching in a Fabry-Perot saturable absorber using a pump-probe technique. The saturable absorbers are multiple quantum wells, 35 and 42 pairs of alternating layers of 7 nm thick compressively strained Ga 0.42 In 0.58 AsP. These quantum wells are separated by 8 nm thick InP barriers. The reflectivity of these samples as a function of the input optical power is theoretically and experimentally investigated. A switching rate of better than 20 MHz is observed. This optical switching is based on the mechanism of controlling the reflectivity of the Fabry-Perot saturable absorber, while operating at its resonant wavelength, by the pump power. Optical switching speed of 10 ns is possible.

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“…36 and 37, with increasing pump power, the emitted pulse width decreased to ultimately reach 3.45 ns and the turn-on time increased. The maximum pulse energy achieved is 0.275 nJ which is about half the energy of the best mode-locked pulses produced to-date [149]. This also demonstrates that the pulses produced by SDLs are ultimately controlled by a combination of the lifetimes of the cold-cavity (calculated to be 886 ps here) and gain (typically ∼ 1-2 ns for InGaAs QWs).…”

Section: Compact Modulesmentioning

confidence: 67%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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21-W picosecond passively mode-locked external-cavity semiconductor laser

Cited by 119 publications

References 10 publications

THz optical pulses from a coupled-cavity quantum-dot laser

THz optical pulses from a coupled-cavity quantum-dot laser

Optical switching in a resonant Fabry–Perot saturable absorber

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

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