2015
DOI: 10.1002/sdtp.10479
|View full text |Cite
|
Sign up to set email alerts
|

21.4: Deposition Conditions and HRTEM Characterization of CAAC IGZO

Abstract: Crystallinity and texture of c-axis aligned crystal indium gallium zinc oxide (CAAC IGZO) films deposited by RF reactive sputtering were studied and characterized over a range of deposition conditions. The characteristic CAAC (009) peak at 2θ=30 o was observed by X-ray diffraction, and nanocrystalline domain texture was determined using a general area detector diffraction system (GADDS). Highly ordered CAAC films were obtained near the InGaZnO4 composition at a substrate temperature of 310 o C and in 10% O2. H… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
16
0

Year Published

2016
2016
2016
2016

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 25 publications
(17 citation statements)
references
References 28 publications
(30 reference statements)
1
16
0
Order By: Relevance
“…We have developed our own equipment to automate this separation process, making this technology suitable for mass production [7]. The FETs use c-axis-aligned crystalline indium gallium zinc oxide [8][9][10][11][12][13], and color display is achieved with a "white tandem OLED, top emission, and color filter" (WTC) structure [14][15][16]. Transparent electrodes with different thicknesses for different colors are provided on reflective electrodes, i.e., a microcavity structure is employed.…”
Section: Kawara-type Multidisplaymentioning
confidence: 99%
“…We have developed our own equipment to automate this separation process, making this technology suitable for mass production [7]. The FETs use c-axis-aligned crystalline indium gallium zinc oxide [8][9][10][11][12][13], and color display is achieved with a "white tandem OLED, top emission, and color filter" (WTC) structure [14][15][16]. Transparent electrodes with different thicknesses for different colors are provided on reflective electrodes, i.e., a microcavity structure is employed.…”
Section: Kawara-type Multidisplaymentioning
confidence: 99%
“…Many recent publications point out the possibility to increase the semiconductor stability and TFT reliability either by a hightemperature sputter deposition process [5], or by post-deposition annealing of a sputtered IGZO film [6], typically in air or oxygen atmosphere. In this case, the temperature applied is in the range of 300 -350°C.…”
Section: Introductionmentioning
confidence: 99%
“…We discovered CAAC-IGZO and nanocrystalline IGZO (nc-IGZO), which have crystal morphologies different from those of single crystal and amorphous IGZOs [9][10][11][12]. Cornell University has also investigated CAAC-OS [13][14][15][16][17][18]. In CAAC-IGZO films, atomic arrangement parallel to a substrate surface is observed by cross-sectional transmission electron microscopy (TEM).…”
Section: Introductionmentioning
confidence: 99%