21.1: Invited Paper: Effect of Channel/Insulator Interface Formation Process on the Oxide TFT Performance

Abstract

Since the first demonstration of oxide TFT driving AM‐OLED, oxide TFT technology has attracted explosive interesting and has been developed for the mass production. The performance of oxide TFT has been verified and the remained issue is bias temperature stability. In this paper, we report the effect of interface process including channel and back channel on the oxide TFT performance in a top gate and a bottom gate structure. We also demonstrate transparent AM‐OLED driven by highly stable Al doped ZTO TFT.

Highly reliable oxide‐semiconductor TFT for AMOLED displays

“…Some researchers have reported that the Al 2 O 3 film deposited by atomic-layer deposition (ALD) or SiO x film deposited by rf sputtering show good passivation properties. 5,6 However, for large-sized flat-panel-display (FPD) manufacturing, ALD and rf sputtering have several limitations for application in the industry due to their difficulty of deposition over a large substrate. On the other hand, dc sputtering is widely adopted for FPD manufacturing, so we chose dc-sputtered Al 2 O 3 as the passivation film.…”

“…Its reliability, however, needs improvement. [5][6][7][8][9][10] We propose here a highly reliable oxide-semiconductor TFT employing the optimum metal for source/drain, the optimum insulator for passivation, and a novel design for the etching stopper and the source/drain. A highly reliable oxide-semiconductor TFT technology with a lifetime of over 10 years for AMOLED displays that adopts a scalable, cost-effective manufacturing method is introduced and demonstrated using an 11.7-in.-diagonal qHD AMOLED display.…”

69.2: Highly Reliable Oxide‐Semiconductor TFT for AM‐OLED Display

“…An oxide semiconductor TFT has superior TFT characteristics such as high on-current and low off-current. Its reliability however needs improvement [4,5].…”

Oxide‐TFT technologies for next‐generation AMOLED displays

“…Some researchers have reported that the Al 2 O 3 film deposited by atomic layer deposition (ALD) or SiO x film deposited by rf sputtering show good passivation properties. 6,7 However, for large-sized flat-panel-display (FPD) manufacturing, ALD and rf sputtering have several limitations for application in the industry due to their difficulty of deposition over a large substrate within a productive deposition time. On the other hand, dc sputtering is widely adopted for FPD manufacturing with high productivity, so we chose dc-sputtered Al 2 O 3 as the passivation.…”